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首页> 外文期刊>Power Electronics, IET >Simulation study of single event effects for split-gate enhanced power U-shape metal-oxide semiconductor field-effect transistor
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Simulation study of single event effects for split-gate enhanced power U-shape metal-oxide semiconductor field-effect transistor

机译：分裂栅增强型U型金属氧化物半导体场效应晶体管单事件效应的仿真研究

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Power metal-oxide semiconductor field-effect transistors (MOSFETs) are increasingly used in the space probes where the environment is composed of various kinds of particles. Thus, it is essential to study the influence of the natural radiation environment on the electrical behaviour of MOSFETs in space. This study presents two-dimensional numerical simulation results, which investigates the sensitive volume, triggering criteria and characteristics of single-event burnout (SEB) and single-event gate rupture (SEGR) for the split-gate enhanced power U-shape MOSFET (SGE-UMOS). In addition, the comparison of the standard Trench-UMOS and SGE-UMOS for both SEB and SEGR simulation results is investigated. The SGE-UMOS shows an improved SEB performance than the standard Trench-UMOS with a larger safe operating area. The SGE-UMOS can also contribute to protect against SEGR compared with standard Trench-UMOS.
机译：功率金属氧化物半导体场效应晶体管（MOSFET）越来越多地用于环境由各种微粒组成的空间探测器中。因此，必须研究自然辐射环境对空间中MOSFET的电性能的影响。这项研究提出了二维数值模拟结果，研究了分离栅极增强型功率U型MOSFET（SGE）的敏感体积，触发标准以及单事件烧断（SEB）和单事件栅极破裂（SEGR）的特性。 -UMOS）。此外，还针对SEB和SEGR仿真结果研究了标准Trench-UMOS和SGE-UMOS的比较。与具有较大安全操作区域的标准Trench-UMOS相比，SGE-UMOS显示出更高的SEB性能。与标准Trench-UMOS相比，SGE-UMOS还可以有助于抵御SEGR。

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