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首页> 外文期刊>Proceedings of the Arkansas Academy of Science >Polishing of CVD-Diamond Substrates Using Reactive Ion Etching
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Polishing of CVD-Diamond Substrates Using Reactive Ion Etching

机译：使用反应离子刻蚀抛光CVD金刚石基板

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摘要

Multichip modules (MCM) have proved to be a viable packaging technology for achieving small size and high performance. By their nature, MCMs typically integrate multiple bare die into a module that can be the plastic or ceramic package. As a result, the MCM requires an efficient mechanism for removing excess heat. Diamond with its excellent thermal conductivity, is the ideal choice as a substrate material for these applications. Chemical vapor deposited (CVD) diamond substrates makes possible the practical realization of a novel diamond based 3-D MCM. However, the diamond films grown by CVD technique are polycrystalline and have non-uniform film roughness and randomly faceted crystals. These non-planar surfaces reduce the diamond's thermal management efficiency. Therefore, it becomes imperative that the as-deposited diamond films be polished for use in MCMs. Chemical assisted mechanical polishing (CAMP) technique has been developed at HiDEC, University of Arkansas. In this technique diamond is lapped against an alumina plate under a load in the presence of certain chemicals. Although CAMP technique reduces the lapping time considerably, still newer techniques must be developed to reduce polishing cost further. We are currently using reactive ion etching (RIE) to substantially reduce the polishing time. Preliminary studies using reactive ion etching showed etch rates of 500 - 1000A/min at low pressures. These etched films showed a considerably higher polishing rate (using CAMP technique) than the non-etched films. Changes in the morphology and structure of the diamond films due to etching and polishing were characterized by scanning electron microscopy (SEM), Dektak profilometer and Raman spectroscopy. This paper presents a systematic study of RIE and CAMP of CVD-diamond substrates.
机译：多芯片模块（MCM）已被证明是实现小尺寸和高性能的可行封装技术。根据其性质，MCM通常将多个裸芯片集成到可以是塑料或陶瓷封装的模块中。结果，MCM需要一种用于去除多余热量的有效机制。金刚石具有出色的导热性，是这些应用的理想基底材料。化学气相沉积（CVD）金刚石基材使新型基于金刚石的3-D MCM的实际实现成为可能。然而，通过CVD技术生长的金刚石膜是多晶的，并且具有不均匀的膜粗糙度和随机刻面的晶体。这些非平面表面会降低钻石的热管理效率。因此，必须对沉积的金刚石膜进行抛光以用于MCM。化学辅助机械抛光（CAMP）技术已在阿肯色大学的HiDEC开发。在该技术中，在某些化学物质存在的情况下，将金刚石在负载下研磨在氧化铝板上。尽管CAMP技术大大减少了研磨时间，但仍必须开发更新的技术以进一步降低抛光成本。我们目前正在使用反应离子蚀刻（RIE）来大大减少抛光时间。使用反应性离子蚀刻的初步研究表明，在低压下蚀刻速率为500-1000A / min。这些蚀刻膜显示出比未蚀刻膜高得多的抛光速率（使用CAMP技术）。通过扫描电子显微镜（SEM），Dektak轮廓仪和拉曼光谱法表征了由于蚀刻和抛光导致的金刚石膜的形态和结构变化。本文对CVD金刚石衬底的RIE和CAMP进行了系统的研究。

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