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首页> 外文期刊>Proceedings of the National Academy of Sciences of the United States of America >VOLTAGE-DEPENDENT GATING CHARACTERISTICS OF THE K+ CHANNEL KAT1 DEPEND ON THE N AND C TERMINI
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VOLTAGE-DEPENDENT GATING CHARACTERISTICS OF THE K+ CHANNEL KAT1 DEPEND ON THE N AND C TERMINI

机译：N +和C端子上K +通道KAT1的电压相关门控特性

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摘要

We studied how the C and N termini of the plant K+ channel KAT1 influence the voltage-dependent gating behavior by generating C- and N-terminal deletion mutants, Functional expression was observed only when C-terminal deletions were downstream of the putative cyclic nucleotide binding site, Treatments of oocytes expressing KAT1 channels with anticytoskeletal agents indicated that intact microtubules are important for functional expression. C-terminal deletions altered tile voltage sensitivity of the KAT1 channel with greater deletions resulting in smaller equivalent charge movements, In contrast, a deletion in the N terminus (Delta 20-34) shifted the half-activation voltage by approximately -65 mV without markedly affecting the number of equivalent charges, The results reveal novel roles of the N and C termini in regulation of the voltage-dependent gating of KAT1. [References: 35]
机译：我们研究了植物K +通道KAT1的C和N末端如何通过产生C和N末端缺失突变体来影响电压依赖性门控行为，仅当C末端缺失位于假定的环状核苷酸结合的下游时才观察到功能性表达现场，用抗细胞骨架剂处理表达KAT1通道的卵母细胞表明完整的微管对于功能表达很重要。 C端缺失改变了KAT1通道的瓦片电压敏感性，而更大的缺失导致了较小的等效电荷运动。相反，N端的缺失（Delta 20-34）将半激活电压移动了大约-65 mV，而没有明显的变化。影响等效电荷数量的结果，结果揭示了N和C末端在调节KAT1电压依赖性门控中的新作用。 [参考：35]

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