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首页> 外文期刊>Progress in crystal growth and characterization of materials >Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics
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Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

机译：电子和光电子学上高度不匹配的III-V材料在（001）硅上的外延生长

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摘要

Monolithic integration of Ⅲ-V on silicon has been a scientifically appealing concept for decades. Notable progress has recently been made in this research area, fueled by significant interests of the electronics industry in high-mobility channel transistors and the booming development of silicon photonics technology. In this review article, we outline the fundamental roadblocks for the epitaxial growth of highly mismatched III-V materials, including arsenides, phosphides, and antimonides, on (001) oriented silicon substrates. Advances in hetero-epitaxy and selective-area hetero-epitaxy from micro to nano length scales are discussed. Opportunities in emerging electronics and integrated photonics are also presented.
机译：几十年来，Ⅲ-Ⅴ在硅上的单片集成一直是一个具有科学吸引力的概念。电子行业对高迁移率沟道晶体管的浓厚兴趣以及硅光子技术的蓬勃发展，推动了该研究领域的显着进步。在这篇综述文章中，我们概述了在（001）取向硅衬底上外延生长高度不匹配的III-V材料（包括砷化物，磷化物和锑化物）的基本障碍。讨论了从微米级到纳米级的异质外延和选择性区域异质外延的进展。还介绍了新兴电子和集成光子学领域的机会。

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    Li Qiang; Lau Kei May;

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    Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong,Institute for Advanced Study, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong;

    Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong,Institute for Advanced Study, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong;

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