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DETERMINING MASK RULE CHECK VIOLATIONS AND MASK DESIGN

机译：确定蒙版规则检查违规和掩码设计

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The description herein relates to a mechanism for determining mask rule check violations and mask design for photolithography masks to be employed in in semiconductor manufacturing.A lithographic projection apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In such a case, a patterning device (e.g., a mask) may contain or provide a circuit pattern corresponding to an individual layer of the IC ("design layout"), and this circuit pattern can be transferred onto a target portion (e.g. comprising one or more dies) on a substrate (e.g., silicon wafer) that has been coated with a layer of radiation-sensitive material ("resist"), by methods such as irradiating the target portion through the circuit pattern on the patterning device. In general, a single substrate contains a plurality of adjacent target portions to which the circuit pattern is transferred successively by the lithographic projection apparatus, one target portion at a time. In one type of lithographic projection apparatuses, the circuit pattern on the entire patterning device is transferred onto one target portion in one go; such an apparatus is commonly referred to as a stepper. In an alternative apparatus, commonly referred to as a step-and-scan apparatus, a projection beam scans over the patterning device in a given reference direction (the "scanning" direction) while synchronously moving the substrate parallel or anti-parallel to this reference direction. Different portions of the circuit pattern on the patterning device are transferred lo one target portion progressively. Since, in general, the lithographic projection apparatus will have a magnification factor M (generally＜1), the speed F at which the substrate is moved will be a factor M times that at which the projection beam scans the patterning device. More information with regard to lithographic devices as described herein can be gleaned, for example, from US 6,046,792, incorporated herein by reference.
机译：这里的描述涉及用于确定用于在半导体制造中使用的光刻掩模的掩模规则检查违规和掩模设计。例如，可以使用光刻投影装置，例如，在集成电路（IC）的制造中。在这种情况下，图案化装置（例如，掩模）可以包含或提供与IC的单个层（“设计布局”）对应的电路图案，并且该电路图案可以被传送到目标部分上（例如，包括一种或多种模具）在已经涂有一层辐射敏感材料（“抗蚀剂”）的基板（例如，硅晶片）上，通过诸如照射目标部分通过图案化装置上的电路图案的方法涂覆。通常，单个衬底包含多个相邻的目标部分，电路图案由光刻投影装置连续传送，一次一个目标部分。在一种类型的光刻投影装置中，整个图案化装置上的电路图案一次转移到一个目标部分上;这种装置通常被称为步进器。在一个替代装置中，通常被称为阶梯和扫描装置，投影光束在给定的参考方向（“扫描”方向）的同时在给定的参考方向（“扫描”方向）上扫描图案化装置，同时同步地移动衬底或者与该参考的衬底平行或防滑方向。图案化装置上的电路图案的不同部分逐渐被传送了LO一个目标部分。由于通常，光刻投影装置将具有放大因子M（通常<1），因此移动基板的速度F将是投影光束扫描图案化装置的因子m次。关于如本文所述的光刻设备的更多信息可以被收集，例如，来自US 6,046,792，通过引用并入本文。

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    《Research Disclosure》 |2021年第687期|2063-2064|共2页
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