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首页> 外文期刊>IEEE sensors journal >Continuous V-Grooved AlGaN/GaN Surfaces for High-Temperature Ultraviolet Photodetectors
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Continuous V-Grooved AlGaN/GaN Surfaces for High-Temperature Ultraviolet Photodetectors

机译：用于高温紫外线光电探测器的连续V型凹槽AlGaN / GaN表面

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摘要

Three-dimensional heterostructured AlGaN/GaN ultraviolet (UV) photodetectors were microfabricated using V-grooved silicon(111) surfaces and metal organic chemical vapor deposition. This novel sensor platform enabled an increase in sensitivity and operation at high temperatures (up to 200°C). More specifically, texturizing the highly conductive 2-D electron gas using the V-groove sensor surfaces, resulted in higher photodetector sensitivity (57.4% increase at room temperature and 139% at 200°C) compared with conventional designs on planar substrates due to the increased absorption of incident UV light (optical trapping). In addition, a 53% reduction in electrical resistance at room temperature and 27.3% at 200°C were observed due to the increased surface area. The decay time for the non-exponential persistent photoconductivity decreased significantly from 327 to 34 sec as the temperature increased from room temperature to 200°C as a result of the accelerated electron–hole pair recombination (generation) rate. These results support the use of textured AlGaN/GaN sensor platforms for UV detection in harsh environments (e.g., downhole, combustion, and space).
机译：三维异质结构的AlGaN / GaN紫外（UV）光电探测器是使用V型槽的硅（111）表面和金属有机化学气相沉积法微制造的。这种新颖的传感器平台提高了灵敏度（在高达200°C的高温下）和运行。更具体地说，与传统的平面基板设计相比，使用V形槽传感器表面对高导电的2-D电子气进行纹理化处理，导致光电探测器灵敏度更高（室温下增加57.4％，在200°C下增加139％）。增加了对入射紫外线的吸收（光学陷阱）。另外，由于表面积增加，观察到室温下电阻降低53％，在200°C下降低27.3％。随着电子-空穴对复合（生成）速率的加快，随着温度从室温升高到200°C，非指数型持久光电导的衰减时间从327减少到34秒。这些结果支持将纹理化的AlGaN / GaN传感器平台用于恶劣环境（例如井下，燃烧和空间）中的紫外线检测。

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