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GaN/AlGaN Strain-Balanced Heterostructures for Near-IR Quantum Well Photodetectors

机译：用于近红外量子阱光电探测器的GaN / alGaN应变平衡异质结构

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This report results from a contract tasking University of Leeds as follows: The contractor will design, fabricate, and analyze Quantum Well Infrared Photodetectors (QWIP) that detect in the 2-6 micron region. The QWIPs performance will be compared to standard MerCad Telluride (HgCdTe) photodector devices working in the same wavelength region.

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作者
Harrison, P.;
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年度 2003
页码 1-22
总页数 22
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Quantum wells; Photodetectors; Electron transport; Infrared detectors; Near infrared radiation; United kingdom; Gallium nitrides; Raman scattering;

机译：量子阱;光电探测器;电子传输;红外探测器;近红外辐射;英国;氮化镓;拉曼散射;

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1. High gain and high ultraviolet/visible rejection ratio photodetectors using p-GaN/AlGaN/GaN heterostructures grown on Si [J] . Qifeng Lyu, Huaxing Jiang, Kei May Lau Applied Physics Letters . 2020,第7期

机译：使用P-GaN / AlGaN / GaN异质结构在Si上生长的高增益和高紫外/可见抑制比光电探测器
2. Material growth and device characterization of AlGaN/GaN single-heterostructure and AlGaN/GaN/AlGaN double-heterostructure field effect transistors on Si substrates [J] . Yu-Lin Hsiao, Chia-Ao Chang, Edward Yi Chang, _Applied Physics Express . 2014,第5期

机译：Si衬底上的AlGaN / GaN单异质结构和AlGaN / GaN / AlGaN双异质结构场效应晶体管的材料生长和器件表征
3. Quantum Confinement in Thin GaN Cap Layers Deposited on AlGaN/GaN Heterostructures: The Issue of Polar Surface Quantum Well [J] . Marta Gladysiewicz, Robert Kudrawiec Japanese journal of applied physics . 2013,第8issue2期

机译：在AlGaN / GaN异质结构上沉积的GaN薄帽层中的量子限制：极性表面量子阱的问题
4. Optoelectronic Properties Of GaN, AlGaN And AlGaN-GaN Quantum Well Heterostructures [C] . Kolbas, R.M., Krishnankutty, . 1993

机译：GaN，AlGaN和AlGaN-GaN量子阱异质结构的光电性能
5. High Performance UV Photodetector and Monolithic Integration of LED and Photodetector on p-GaN/AlGaN/GaN Heterostructure Grown on Si [D] . Lyu, Qifeng. 2021

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6. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers [O] . Ya-Ju Lee, Yung-Chi Yao, Chun-Ying Huang, 2014

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7. Designing strain-balanced GaN/AlGaN quantum well structures: Application to intersubband devices at 1.3 and 1.55 mu m wavelengths [O] . Jovanovic V.D., Ikonic Z., Indjin D., 2003

机译：设计应变平衡的GaN / alGaN量子阱结构：应用于1.3和1.55μm波长的子带间器件

GaN/AlGaN Strain-Balanced Heterostructures for Near-IR Quantum Well Photodetectors

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