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首页> 外文期刊>IEEE sensors journal >Optimization of 4H-SiC UV Photodiode Performance Using Numerical Process and Device Simulation
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Optimization of 4H-SiC UV Photodiode Performance Using Numerical Process and Device Simulation

机译：利用数值过程和器件仿真优化4H-SiC紫外光电二极管性能

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摘要

A numerical model for the simulation of ultraviolet sensitive ion-implanted 4H-SiC photodiodes is established. To explain the measured wavelength dependence of the photoresponsivity of such photodiodes, conventional simulation model was modified twofold. First, new experimental data on the optical properties of 4H-SiC were included into the model. Second, the doping dependence of recombination lifetimes was recalibrated, resulting in a stronger recombination of charge carriers in the ion-implanted region near the SiC surface. After the calibration of the model using experimental data, the model was applied for the optimization of the photodiode performance. An improvement of photoresponsivity by about 30% can be achieved by optimizing the thickness of antireflective layer. An improvement by more than 70% can be achieved by lowering doping level to cm in the epitaxial layer of 4H-SiC diodes.
机译：建立了模拟紫外敏感离子注入4H-SiC光电二极管的数值模型。为了解释所测得的这种光电二极管的光响应性的波长依赖性，对传统的仿真模型进行了两次修改。首先，将有关4H-SiC光学特性的新实验数据包括到模型中。其次，重新校准了复合寿命的掺杂依赖性，从而在SiC表面附近的离子注入区中使载流子更强地复合。在使用实验数据对模型进行校准之后，将模型应用于光电二极管性能的优化。通过优化抗反射层的厚度，可以将光响应性提高约30％。通过将4H-SiC二极管的外延层中的掺杂水平降低到cm，可以实现70％以上的改进。

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