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Analyzing the Radiation Degradation of 4-Transistor Deep Submicron Technology CMOS Image Sensors

机译：分析4晶体管深亚微米技术CMOS图像传感器的辐射衰减

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This paper presents a radiation degradation study on 4-Transistor (4T) complementary metal-oxide-semiconductor (CMOS) image sensors designed in standard 0.18-μm technology. The significant contribution of this paper is a systematic evaluation of the X-ray radiation effects on image sensors from the individual device level, to the pixel level and to the level of the entire sensor. The major degradation parameters of the sensor have been analyzed. This paper also includes test structures of varying geometries of in-pixel MOSFETs, pinned photodiodes (PPD), and transfer gates (TG). Characterization was performed during different X-ray doses up to 109 krad. The major degradation-an increase in the dark signal-is analyzed by modifying the TG charge transfer time and integration time. The PPD and the TG are the elements most sensitive to the dark signal of the sensor. The radiation-related dimensional effects on the sensors are also evaluated, which show different results compared to 3T pixels. The transfer-gate length influences the dark signal due to not only the electric field variation in the TG channel but also the local defect generations. In-pixel MOSFETs are used to identify the origin of increases in radiation-induced dark signal. Shallow trench isolation (STI) oxides are responsible for the radiation degradation of the sensor. A slight degradation of the quantum efficiency was observed after radiation in the short-wavelength region. Basic hardening-by-design techniques are also presented. The discussion results of the radiation-related dimensional effects on the sensors together with the STI effect can be used as a guideline for future layout designs of radiation-tolerant sensors. Identifying the pixel dark current origin can help to determine where and how to suppress the pixel dark current generation more effectively.
机译：本文介绍了采用标准0.18μm技术设计的4晶体管（4T）互补金属氧化物半导体（CMOS）图像传感器的辐射衰减研究。本文的重要贡献是系统地评估了X射线辐射对图像传感器的影响，从单个设备级别到像素级别，再到整个传感器级别。分析了传感器的主要降级参数。本文还介绍了像素内MOSFET，固定光电二极管（PPD）和传输门（TG）的各种几何形状的测试结构。在不超过109 krad的不同X射线剂量下进行了表征。通过修改TG电荷转移时间和积分时间，可以分析主要的降解（暗信号的增加）。 PPD和TG是对传感器的暗信号最敏感的元素。还评估了传感器上与辐射相关的尺寸效应，与3T像素相比，这些效应显示出不同的结果。传输门长度不仅会影响TG通道中的电场变化，还会影响局部缺陷的产生，从而影响暗信号。像素内MOSFET用于识别辐射引起的暗信号增加的起因。浅沟槽隔离（STI）氧化物是导致传感器辐射衰减的原因。在短波长区域中辐射后，观察到量子效率略有下降。还介绍了基本的设计硬化技术。传感器上与辐射有关的尺寸效应以及STI效应的讨论结果可以用作将来耐辐射传感器的布局设计的指南。识别像素暗电流起源可以帮助确定在何处以及如何更有效地抑制像素暗电流的产生。

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    《Sensors Journal, IEEE》 |2012年第6期|p.2278-2286|共9页
  • 作者

    Jiaming Tan;

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