Generic Radiation Hardened Photodiode Layouts for Deep Submicron CMOS Image Sensor Processes

Goiffon V.; Cervantes P.; Virmontois C.; Corbiere F.; Magnan P.; Estribeau M.

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Generic Radiation Hardened Photodiode Layouts for Deep Submicron CMOS Image Sensor Processes

机译：用于深亚微米CMOS图像传感器工艺的通用辐射硬化光电二极管布局

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Selected radiation hardened photodiode layouts, manufactured in a deep submicron CMOS Image Sensor technology, are irradiated by $^{60}{hbox {Co}}$ $gamma$-rays up to 2.2 Mrad(SiO$_2$) and studied in order to identify the most efficient structures and the guidelines (recess distance, bias voltage) to follow to make them work efficiently in such technology. To do so, both photodiode arrays and active pixel sensors are used. After 2.2 Mrad(SiO$_2$), the studied sensors are fully functional and most of the radiation hardened photodiodes exhibit radiation induced dark current values more than one order of magnitude lower than the standard photodiode.

机译：使用深亚微米CMOS图像传感器技术制造的选定的辐射硬化光电二极管布局，受到最高至2.2 Mrad（SiO $ _2 $）的$ ^ {60} {hbox {Co}} $$γ$射线的照射，并按顺序研究确定最有效的结构和指导原则（凹进距离，偏置电压），以使其在此类技术中有效工作。为此，同时使用了光电二极管阵列和有源像素传感器。在2.2 Mrad（SiO $ _2 $）之后，所研究的传感器即可正常工作，并且大多数经过辐射硬化的光电二极管的辐射感应暗电流值比标准光电二极管低一个数量级。

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来源
《Nuclear Science, IEEE Transactions on》 |2011年第6期|p.3076-3084|共9页
作者
Goiffon V.; Cervantes P.; Virmontois C.; Corbiere F.; Magnan P.; Estribeau M.;
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Universit?? de Toulouse, ISAE, Toulouse, France;

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正文语种 eng
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Active pixel sensors (APS); CMOS image sensors (CIS); dark current; deep submicron (DSM) processes; interface states; ionizing radiation; monolithic active pixel sensor (MAPS); radiation hardening by design (RHBD); shallow trench isolation (STI); total ionizing dose (TID); trapped charge;

机译：有源像素传感器（APS）;CMOS图像传感器（CIS）;暗电流;深亚微米（DSM）工艺;界面状态;电离辐射;整体式有源像素传感器（MAPS）;设计辐射硬化（RHBD）;浅沟槽隔离（ STI）;总电离剂量（TID）;捕获的电荷;

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1. Analyzing the Radiation Degradation of 4-Transistor Deep Submicron Technology CMOS Image Sensors [J] . Jiaming Tan Sensors Journal, IEEE . 2012,第6期

机译：分析4晶体管深亚微米技术CMOS图像传感器的辐射衰减
2. Displacement Damage Effects Due to Neutron and Proton Irradiations on CMOS Image Sensors Manufactured in Deep Submicron Technology [J] . Virmontois C.Goiffon V.Magnan P.Girard S.Inguimbert C.Petit S.Rolland G.Saint-Pe O. Nuclear Science, IEEE Transactions on . 2010,第6期

机译：中子和质子辐射对深亚微米技术制造的CMOS图像传感器产生的位移损伤效应
3. Degradation Of Cmos Image Sensors In Deep-submicron Technology Due To γ-irradiation [J] . Padmakumar R, Rao, Xinyang Wang, Solid-State Electronics . 2008,第9期

机译：γ辐射导致深亚微米技术中的Cmos图像传感器性能下降
4. Radiation Damages in CMOS Image Sensors:Testing and Hardening Challenges Brought by Deep Sub-Micrometer CIS Processes [C] . Vincent Goiffon, Cedric Virmontois, Pierre Magnan, Sensors, systems, and next-generation satellites XIV . 2010

机译：CMOS图像传感器中的辐射损伤：深亚微米CIS工艺带来的测试和硬化挑战
5. Low power high performance VLSI design in deep-submicron CMOS processes. [D] . Hamzaoglu, Fatih. 2003

机译：深亚微米CMOS工艺中的低功耗高性能VLSI设计。
6. Deep Trench Isolation and Inverted Pyramid Array Structures Used to Enhance Optical Efficiency of Photodiode in CMOS Image Sensor via Simulations [O] . Chang-Fu Han, Jiun-Ming Chiou, Jen-Fin Lin 2020

机译：深沟槽隔离和倒金字塔结构用于通过仿真提高CMOS图像传感器中光电二极管的光学效率
7. Generic radiation hardened photodiode layouts for deep submicron CMOS image sensor processes [O] . Goiffon Vincent, Cervantes Paola, Virmontois Cédric, 2011

机译：适用于深亚微米CMOS图像传感器工艺的通用辐射硬化光电二极管布局

Generic Radiation Hardened Photodiode Layouts for Deep Submicron CMOS Image Sensor Processes

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