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Generic radiation hardened photodiode layouts for deep submicron CMOS image sensor processes

机译：适用于深亚微米CMOS图像传感器工艺的通用辐射硬化光电二极管布局

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Selected radiation hardened photodiode layouts, manufactured in a deep submicron CMOS Image Sensor technology, are irradiated by 60Co gamma-rays up to 2.2 Mrad(SiO2) and studied in order to identify the most efficient structures and the guidelines (recess distance, bias voltage) to follow to make them work efficiently in such technology. To do so, both photodiode arrays and active pixel sensors are used. After 2.2 Mrad(SiO2), the studied sensors are fully functional and most of the radiation hardened photodiodes exhibit radiation induced dark current values more than one order of magnitude lower than the standard photodiode.

机译：使用深亚微米CMOS图像传感器技术制造的精选辐射硬化光电二极管布局，受到高达2.2 Mrad（SiO2）的60Co伽玛射线照射，并进行了研究，以便确定最有效的结构和准则（凹进距离，偏置电压）跟随他们，使他们在这种技术中高效工作。为此，同时使用了光电二极管阵列和有源像素传感器。在2.2 Mrad（SiO2）之后，所研究的传感器可以正常工作，并且大多数经过辐射硬化的光电二极管显示的辐射感应暗电流值比标准光电二极管低一个数量级。

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Goiffon Vincent; Cervantes Paola; Virmontois Cédric; Corbière Franck; Magnan Pierre; Estribeau Magali;
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年度 2011
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正文语种 {"code":"en","name":"English","id":9}
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1. Generic Radiation Hardened Photodiode Layouts for Deep Submicron CMOS Image Sensor Processes [J] . Goiffon V., Cervantes P., Virmontois C., Nuclear Science, IEEE Transactions on . 2011,第6期

机译：用于深亚微米CMOS图像传感器工艺的通用辐射硬化光电二极管布局
2. Analyzing the Radiation Degradation of 4-Transistor Deep Submicron Technology CMOS Image Sensors [J] . Jiaming Tan Sensors Journal, IEEE . 2012,第6期

机译：分析4晶体管深亚微米技术CMOS图像传感器的辐射衰减
3. Displacement Damage Effects Due to Neutron and Proton Irradiations on CMOS Image Sensors Manufactured in Deep Submicron Technology [J] . Virmontois C.Goiffon V.Magnan P.Girard S.Inguimbert C.Petit S.Rolland G.Saint-Pe O. Nuclear Science, IEEE Transactions on . 2010,第6期

机译：中子和质子辐射对深亚微米技术制造的CMOS图像传感器产生的位移损伤效应
4. Radiation Damages in CMOS Image Sensors:Testing and Hardening Challenges Brought by Deep Sub-Micrometer CIS Processes [C] . Vincent Goiffon, Cedric Virmontois, Pierre Magnan, Sensors, systems, and next-generation satellites XIV . 2010

机译：CMOS图像传感器中的辐射损伤：深亚微米CIS工艺带来的测试和硬化挑战
5. Low power high performance VLSI design in deep-submicron CMOS processes. [D] . Hamzaoglu, Fatih. 2003

机译：深亚微米CMOS工艺中的低功耗高性能VLSI设计。
6. Deep Trench Isolation and Inverted Pyramid Array Structures Used to Enhance Optical Efficiency of Photodiode in CMOS Image Sensor via Simulations [O] . Chang-Fu Han, Jiun-Ming Chiou, Jen-Fin Lin 2020

机译：深沟槽隔离和倒金字塔结构用于通过仿真提高CMOS图像传感器中光电二极管的光学效率
7. Radiation damages in CMOS image sensors: testing and hardening challenges brought by deep sub-micrometer CIS processes [O] . Goiffon Vincent, Virmontois Cédric, Magnan Pierre, 2010

机译：CMOS图像传感器中的辐射损伤：深亚微米CIS工艺带来的测试和硬化挑战

Generic radiation hardened photodiode layouts for deep submicron CMOS image sensor processes

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