Characterization of Single-Photon Avalanche Diodes in a 0.5   m Standard CMOS Process—Part 1: Perimeter Breakdown Suppression

Dandin M.; Akturk A.; Nouri B.; Goldsman N.; Abshire P.

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Characterization of Single-Photon Avalanche Diodes in a 0.5 m Standard CMOS Process—Part 1: Perimeter Breakdown Suppression

机译：0.5 m标准CMOS工艺中单光子雪崩二极管的特性表征-第1部分：周边击穿抑制

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We report on the breakdown characteristics of a single-photon avalanche diode structure fabricated in a $0.5 mu$m single-well CMOS process. This paper features two mechanisms for reducing perimeter breakdown. The first mechanism consists of using the lateral diffusion of adjacent n-wells to reduce the electric field at the diode's periphery, and the second makes use of a poly-silicon gate over the high field regions to modulate the electric field. We studied each technique independently as well as their combined effect on the devices' avalanche profiles. In addition to marked alterations in the current-voltage curves near and above breakdown, the diodes' breakdown voltages were increased by more than 4 V, indicating that perimeter breakdown was curtailed.

机译：我们报告了以0.5微米的单阱CMOS工艺制造的单光子雪崩二极管结构的击穿特性。本文介绍了两种减少周界故障的机制。第一种机制是利用相邻n阱的横向扩散来减小二极管外围的电场，第二种机制是利用高场区域上方的多晶硅栅极来调制电场。我们独立研究了每种技术及其对设备雪崩曲线的综合影响。除了击穿附近和击穿附近的电流-电压曲线有明显变化外，二极管的击穿电压也增加了4 V以上，这表明周边击穿受到了限制。

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来源
《Sensors Journal, IEEE》 |2010年第11期|P.1682-1690|共9页
作者
Dandin M.; Akturk A.; Nouri B.; Goldsman N.; Abshire P.;
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作者单位

Fischell Department of Bioengineering, University of Maryland, College Park,;

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正文语种 eng
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关键词
Avalanche breakdown; CMOS integrated circuits; avalanche photodiodes; integrated circuit modeling; single photon;

机译：雪崩击穿;CMOS集成电路;雪崩光电二极管;集成电路建模;单光子;

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1. Characterization of Single-Photon Avalanche Diodes in a 0.5- Standard CMOS Process—Part 2: Equivalent Circuit Model and Geiger Mode Readout [J] . M. Dandin, M. H. U. Habib, B. Nouri, IEEE sensors journal . 2016,第9期

机译：0.5标准CMOS工艺中单光子雪崩二极管的表征-第2部分：等效电路模型和盖革模式读数
2. Breakdown and optical response of CMOS perimeter gated single-photon avalanche diodes [J] . M.H.U. Habib, N. McFarlane Electronics Letters . 2017,第19期

机译：CMOS外围门控单光子雪崩二极管的击穿和光响应
3. An Analog CMOS Silicon Photomultiplier Using Perimeter-Gated Single-Photon Avalanche Diodes [J] . Mst Shamim Ara Shawkat, Mohammad Habib Ullah Habib, Nicole McFarlane IEEE transactions on circuits and systems . I , Regular papers . 2018,第11期

机译：使用外围门控单光子雪崩二极管的模拟CMOS硅光电倍增管
4. A Single-Photon Avalanche Diode in CMOS 0.5#x03BC;m n-well process [C] . Zhang Bowei, Li Zhenyu, Zaghloul Mona E. IEEE Sensors . 2012

机译：CMOS0.5μmn阱工艺中的单光子雪崩二极管
5. CMOS single-photon avalanche diodes and micromachined optical filters for integrated fluorescence sensing. [D] . Dandin, Marc Peralte. 2012

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6. Dynamic fluorescence lifetime sensing with CMOS single-photon avalanche diode arrays and deep learning processors [O] . Dong Xiao, Zhenya Zang, Natakorn Sapermsap, 2021

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7. A first single-photon avalanche diode fabricated in standard SOI CMOS technology with a full characterization of the device [O] . Lee, M.J. (author), Sun, P. (author), Charbon, E. (author) 2015

机译：采用标准SOI CMOS技术制造的首个单光子雪崩二极管，具有器件的完整特性

Characterization of Single-Photon Avalanche Diodes in a 0.5 m Standard CMOS Process—Part 1: Perimeter Breakdown Suppression

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