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Impedance spectroscopy coupled with voltammetry for quantitative evaluation of temperature and voltage dependent parameters of a silicon solar cell

机译:阻抗光谱法与伏安法耦合用于定量评估硅太阳能电池的温度和电压相关参数

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摘要

The techniques of linear sweep voltammetry (LSV) and impedance spectroscopy (IS) are combined to study the detailed temperature and voltage dependencies of a range of performance-indicator parameters of a mono-crystalline n~+-p Si solar cell. The complex nonlinear least square fitting procedure is employed for quantitative evaluation of the IS data. The underlying mechanisms of the observed temperature/voltage sensitive characteristics of the cell are examined using a collection of currently available theoretical models. The individual roles of minority carrier diffusion and defect-induced charge recombination are manifested in the voltage and temperature dependent signatures of the measured cell parameters. These parameters include the transition layer capacitance and built-in potential of the n~+~p interface, the acceptor concentration in the base, the series, shunt and recombination resistances, and the effective diode ideality factor.
机译:结合线性扫描伏安法(LSV)和阻抗谱(IS)技术研究单晶n〜+ -p硅太阳能电池一系列性能指标参数的详细温度和电压依赖性。复杂的非线性最小二乘拟合程序用于IS数据的定量评估。使用一组当前可用的理论模型检查了观察到的电池温度/电压敏感特性的基本机制。少数载流子扩散和缺陷诱导的电荷重组的单独作用在所测电池参数的电压和温度相关特征中得到体现。这些参数包括过渡层电容和n〜+〜p接口的内置电势,基极中的受主浓度,串联电阻,并联电阻和复合电阻以及有效二极管理想因子。

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