As a result of developing wide bandgap InGaP double hetero structure tunnel junction for sub-cell interconnection, InGaAs middle cell lattice-matched to Ge substrate, and InGaP-Ge heteroface structure bottom cell, we have demonstrated 38.9% efficiency at 489-suns AM 1.5 with InGaP/InGaP/Ge 3-junction solar cells by in-house measurements. In addition, as a result of developing a non-imaging Fresnel lens as primary optics, a glass-rod kaleidoscope homogenizer as secondary optics and heat conductive concentrator solar cell modules, we have demonstrated 28.9% efficiency with 550-suns concentrator cell modules with an area of 5445 cm~2. In order to realize 40% and 50% efficiency, new approaches for novel materials and structures are being studied. We have obtained the following results: (1) improvements of lattice-mismatched InGaP/InGaAs/Ge 3-junction solar cell property as a result of dislocation density reduction by using thermal cycle annealing, (2) high quality (In)GaAsN material for 4- and 5-junction applications by chemical beam epitaxy, (3) 11.27% efficiency InGaAsN single-junction cells, (4) 18.27% efficiency InGaAs/GaAs potentially modulated quantum well cells, and (5) 7.65% efficiency InAs quantum dot cells.
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机译：由于开发了用于子电池互连的宽带隙InGaP双异质结构隧道结，与Ge衬底晶格匹配的InGaAs中间电池以及InGaP-Ge异质面结构底部电池，我们在489 suns AM 1.5下显示了38.9％的效率。通过内部测量使用InGaP / InGaP / Ge 3结太阳能电池。此外，由于开发了非成像菲涅耳透镜作为主要光学器件，开发了玻璃棒万花筒均质器作为辅助光学器件以及导热聚光器太阳能电池模块，我们证明了使用550 suns聚光器电池模块具有28.9％的效率。面积5445 cm〜2。为了实现40％和50％的效率，正在研究新型材料和结构的新方法。我们获得了以下结果：（1）通过使用热循环退火降低位错密度，改善了晶格失配的InGaP / InGaAs / Ge 3结太阳能电池的性能；（2）高质量（In）GaAsN材料用于通过化学束外延进行4结和5结应用，（3）InGaAsN单结电池效率为11.27％，（4）InGaAs / GaAs潜在调制量子阱电池的效率为18.27％，（5）InAs量子点电池的效率为7.65％ 。
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