Portless SRAM—A High-Performance Alternative to the 6T Methodology

Wieckowski M.; Patil S.; Margala M.

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Portless SRAM—A High-Performance Alternative to the 6T Methodology

机译：无端口SRAM-6T方法的高性能替代品

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摘要

A novel memory cell, termed “portless” SRAM, is presented as a direct alternative to the standard 6T design. The new cell consists of only five transistors and does not make use of any pass-transistor ports. A complete theoretical and functional analysis is presented along with a design methodology for implementing the new memory cell. In addition, simulations are presented on the cell level and on the cache level exhibiting comparative improvements on the order of 19$,times$ and 6$,times$ in dynamic power and leakage power respectively. This is augmented by a 20% improvement in static noise margin for a comparable cell area. A test chip was fabricated, and measured results are presented demonstrating functionality of the new cell.

机译：提出了一种新颖的称为“无端口” SRAM的存储单元，作为标准6T设计的直接替代方案。新单元仅由五个晶体管组成，并且不使用任何传输晶体管端口。提出了完整的理论和功能分析，以及用于实现新存储单元的设计方法。另外，在信元级和高速缓存级上给出了仿真，它们在动态功率和泄漏功率上分别表现出分别为19 19、6 $和6 comparative的相对改进。对于可比较的单元区域，静态噪声容限提高了20％，从而增强了性能。制作了测试芯片，并提供了测量结果，证明了新电池的功能。

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来源
《IEEE Journal of Solid-State Circuits》 |2007年第11期|p.2600-2610|共11页
作者
Wieckowski M.; Patil S.; Margala M.;
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作者单位

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类一般性问题;基本电子电路;
关键词
5T; 6T; CMOS memory; SRAM; low power;

机译：5T;6T;CMOS存储器;SRAM;低功耗;

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1. Comparison of Conventional 6T SRAM cell and FinFET based 6T SRAM Cell Parameters at 45nm Technology [J] . Deepali Verma, Shyam Babu, Shyam Akashe International Journal of Advanced Computer Research . 2015,第21期

机译：常规6T SRAM单元和基于FinFET的45nm技术的6T SRAM单元参数的比较
2. Carbon Nanotube-Based CMOS SRAM: 1 kbit 6T SRAM Arrays and 10T SRAM Cells [J] . Kanhaiya Pritpal S., Lau Christian, Hills Gage, IEEE Transactions on Electron Devices . 2019,第12期

机译：基于碳纳米管的CMOS SRAM：1 kbit 6T SRAM阵列和10T SRAM单元
3. Effective Low Leakage 6T and 8T FinFET SRAMs: Using Cells With Reverse-Biased FinFETs, Near-Threshold Operation, and Power Gating [J] . Turi Michael A., Delgado-Frias Jose G. IEEE transactions on circuits and systems. II, Express briefs . 2020,第4期

机译：有效的低泄漏6T和8T FinFET SRAM：使用具有反向偏置的FinFet的电池，近阈值操作和功率门控
4. High-performance 0.6V VMIN 55nm 1.0Mb 6T SRAM with adaptive BL bleeder [C] . Yang, Hao-I, Lin, Yi-Wei, Hsia, Mao-Chih, ISCAS 2012;IEEE International Symposium on Circuits and Systems . 2012

机译：具有自适应BL泄放的高性能0.6V VMIN 55nm 1.0Mb 6T SRAM
5. Performance Analysis of 7nm FinFET Based 6t SRAM Cell – Transient and DC Analysis [D] . Khan, Sheebasamreen. 2021

机译：基于7NM FinFET的6T SRAM细胞瞬态和DC分析性能分析
6. Introduction and summary of the 13th meeting of the Scientific Group on Methodologies for the Safety Evaluation of Chemicals (SGOMSEC): alternative testing methodologies. [O] . W S Stokes, E Marafante 1998

机译：化学品安全评估方法科学小组（SGOMSEC）第13次会议的简介和摘要：替代测试方法。
7. A STUDY ON 6T SRAM AND 7T SRAM CELLS [O] . JenniferEunice.R . 2018

机译：6T SRAM和7T SRAM细胞的研究

Portless SRAM—A High-Performance Alternative to the 6T Methodology

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