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首页> 外文期刊>IEEE Journal of Solid-State Circuits >A Sub-1-V Low-Noise Bandgap Voltage Reference
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A Sub-1-V Low-Noise Bandgap Voltage Reference

机译：1V以下的低噪声带隙基准电压源

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摘要

A new sub-1-V bandgap voltage reference is presented in this paper, which has advantages over the prior arts in terms of output noise and compatibility with several fabrication processes. The topology allows the reference to operate with a supply voltage as low as 1 V by employing the reverse bandgap voltage principle (RBVP). It also has an attractive low-noise output without the use of a large external filtering capacitor. The design was fabricated with a 0.5-$mu{hbox {m}}$ BiCMOS process, but it is compatible with most CMOS and BiCMOS fabrication processes. The entire die area is approximately 0.4 ${hbox {mm}}{2}$, including all test pads and dummy devices. Theoretical analysis and experimental results show that the output noise spectral density is 40 ${hbox{nV}}/ surd {hbox{Hz}}$ with a bias current of 20 $mu{hbox {A}}$. Moreover, the peak-to-peak output noise in the 0.1驴10 Hz band is only 4 $mu{hbox{V}}$. The untrimmed reference has a mean output voltage of 190.9 mV at room temperature, and it has a temperature coefficient in the $-$40 $,{circ}{hbox{C}}$ to $+{hbox{125}}, {circ}{hbox{C}}$ range of 11 ${hbox{ppm}}/{circ}{hbox{C}}$ (mean) with a standard deviation of 5 ${hbox{ppm}}/{circ}{hbox{C}}$ .
机译：本文提出了一种新的低于1V的带隙基准电压源，它在输出噪声和与几种制造工艺的兼容性方面均优于现有技术。通过采用反向带隙电压原理（RBVP），该拓扑结构允许参考电压在低至1 V的电源电压下工作。它也具有引人注目的低噪声输出，而无需使用大型外部滤波电容器。该设计采用0.5-μmu{hbox {m}} $ BiCMOS工艺制造，但与大多数CMOS和BiCMOS制造工艺兼容。整个芯片面积约为0.4 $ {hbox {mm}} {2} $，包括所有测试垫和虚拟器件。理论分析和实验结果表明，输出噪声频谱密度为40 $ {hbox {nV}} / surd {hbox {Hz}} $，偏置电流为20 $ mu {hbox {A}} $。此外，在0.1驴10 Hz频段的峰峰值输出噪声仅为4 $ mu {hbox {V}} $。未修剪的基准在室温下的平均输出电压为190.9 mV，其温度系数在$-$ 40 $，{circ} {hbox {C}} $到$ + {hbox {125}}，{circ } {hbox {C}} $范围为11 $ {hbox {ppm}} / {circ} {hbox {C}} $（平均值），标准偏差为5 $ {hbox {ppm}} / {circ} { hbox {C}} $。

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