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首页> 外文期刊>IEEE Journal of Solid-State Circuits >MOS transistor modeling for RF IC design
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MOS transistor modeling for RF IC design

机译：用于RF IC设计的MOS晶体管建模

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This paper presents the basis of the modeling of the MOSntransistor for circuit simulation at RF. A physical equivalent circuitnthat can easily be implemented as a Spice subcircuit is first derived.nThe subcircuit includes a substrate network that accounts for the signalncoupling occurring at HF from the drain to the source and the bulk. Itnis shown that the latter mainly affects the output admittance Y22. Thenbias and geometry dependence of the subcircuit components, leading to anscalable model, are then discussed with emphasis on the substratenresistances. Analytical expressions of the Y parameters are establishednand compared to measurements made on a 0.25-Μm CMOS process. The Ynparameters and transit frequency simulated with this scalable modelnversus frequency, geometry, and bias are in good agreement with measuredndata. The nonquasi-static effects and their practical implementation innthe Spice subcircuit are then briefly discussed. Finally, a new thermalnnoise model is introduced. The parameters used to characterize the noisenat HF are then presented and the scalable model is favorably compared tonmeasurements made on the same devices used for the S-parameternmeasurement
机译：本文介绍了用于RF电路仿真的MOSn晶体管建模的基础。首先推导出一个物理等效电路，该电路很容易实现为Spice子电路。n子电路包括一个基底网络，该基底网络负责在HF处发生从漏极到源极和整体的信号耦合。 Itnis表明，后者主要影响输出导纳Y22。然后，讨论子电路组件的偏置和几何形状相关性，从而得出可扩展的模型，并着重于衬底电阻。建立Y参数的分析表达式，并将其与在0.25μmCMOS工艺上进行的测量进行比较。使用此可扩展模型，频率，几何形状和偏差模拟的Yn参数和过渡频率与实测n数据非常吻合。然后简要讨论了Spice子电路中的非准静态效应及其实际实现。最后，介绍了一种新的热噪声模型。然后介绍用于表征noisenat HF​​的参数，并对可扩展模型进行有利地比较，这些测量是在用于S参数测量的同一设备上进行的。

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