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首页> 外文期刊>IEEE Journal of Solid-State Circuits >A GaAs HEMT MMIC chip set for automotive radar systems fabricated by optical stepper lithography
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A GaAs HEMT MMIC chip set for automotive radar systems fabricated by optical stepper lithography

机译：通过光学步进光刻制造的用于汽车雷达系统的GaAs HEMT MMIC芯片组

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摘要

A 77 GHz automotive radar system for collision avoidance and intelligent cruise control has recently gained interest because of its huge market potential. The questions of the optimum technological and system approaches leading to both low cost and high performance have not yet been finally answered. The approach to this problem reported here differs mainly in two aspects from the GaAs monolithic microwave integrated circuit (MMIC) solutions described earlier: (1) 0.12 /spl mu/m gatelength pseudomorphic high electron mobility transistors (PHEMTs) are fabricated by optical stepper lithography, (2) a coplanar design is used. A fully passivated PHEMT MMIC fabrication process is reported with current-gain and power-gain cutoff frequencies exceeding 115 and 220 GHz, respectively. The design and performance of a chip set consisting of four different MMICs [voltage controlled oscillator (VCO), harmonic mixer, transmitter, receiver] are described. The great potential of this MMIC approach to meet all system requirements of an automotive radar sensor in a cost-effective and production-oriented way is shown. To our knowledge, this is the first demonstration of W-band coplanar multifunctional MMICs fabricated by optical stepper lithography.
机译：用于避撞和智能巡航控制的77 GHz汽车雷达系统由于其巨大的市场潜力，最近引起了人们的兴趣。导致低成本和高性能的最佳技术和系统方法的问题尚未得到最终解答。此处报告的解决此问题的方法与先前描述的GaAs单片微波集成电路（MMIC）解决方案主要在两个方面不同：（1）通过光学步进光刻制造0.12 / spl mu / m栅长的伪形高电子迁移率晶体管（PHEMT） ，（2）使用共面设计。据报道，完全钝化的PHEMT MMIC制造工艺的电流增益和功率增益截止频率分别超过115 GHz和220 GHz。描述了由四个不同的MMIC [压控振荡器（VCO），谐波混频器，发送器，接收器]组成的芯片组的设计和性能。展示了这种MMIC方法以低成本和面向生产的方式满足汽车雷达传感器的所有系统要求的巨大潜力。据我们所知，这是通过光学步进光刻技术制造的W波段共面多功能MMIC的首次演示。

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