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Photoluminescence characteristics from amorphous SiC thin films with various structures deposited at low temperature

机译：低温沉积各种结构的非晶SiC薄膜的光致发光特性

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摘要

Hydrogenated amorphous SiC thin films deposited at low substrate temperature (100degreesC) show the different bonding configurations and microstructures which depend on the carbon concentrations in the films controlled by the gas ratio R of methane to silane during the deposition. Photoluminescence characteristics are investigated for these samples with different structures. A strong luminescence in red light region can be observed for samples deposited with low gas ratio R which is significantly reduced its intensity with increasing the carbon concentrations in the films. On the other hand, the luminescence bands located at blue-green light region are detected under UV light excitation for samples deposited with high gas ratio R, which can be associated with the existence of amorphous SiC clusters in the films. (C) 2004 Elsevier Ltd. All rights reserved.
机译：在较低的基板温度（100摄氏度）下沉积的氢化非晶SiC薄膜显示出不同的键合结构和微观结构，这取决于沉积过程中甲烷与硅烷的气体比R控制的薄膜中的碳浓度。研究了具有不同结构的这些样品的光致发光特性。对于以低气体比率R沉积的样品，可以观察到在红光区域中的强烈发光，随着气体浓度R的增加，薄膜中碳的浓度会显着降低。另一方面，对于高气体比率R沉积的样品，在紫外光激发下检测到位于蓝绿色光区域的发光带，这可能与薄膜中存在非晶SiC簇有关。 （C）2004 Elsevier Ltd.保留所有权利。

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