Light-induced creation of hydrogen-pairs in a-Si:H

K. Morigaki; H. Hikita

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Light-induced creation of hydrogen-pairs in a-Si:H

机译：光致a-Si：H中氢对的产生

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摘要

The light-induced creation of hydrogen-pairs in a-Si:H is investigated, using a previous model of the light-induced creation of dangling bonds in a-Si:H. The formation of hydrogen-pairs is reasonably accounted for in comparison with the observation of the doublet in nuclear magnetic resonance spectra in a-Si:H by Su et al. The spin-lattice relaxation time of hydrogen-pairs observed above 7 K by Su et al. is discussed in terms of the presence of a normal dangling bond located near a hydrogen-pair.

机译：使用光诱导a-Si：H中悬挂键的先前模型，研究了光诱导a-Si：H中氢对的产生。与Su等人在a-Si：H中观察到的核磁共振谱中的双峰相比较，可以合理地解释氢对的形成。 Su等人在7 K以上观察到氢对的自旋晶格弛豫时间。根据位于氢对附近的正常悬空键的存在来讨论“α”。

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来源
《Solid State Communications》 |2005年第12期|p.616-620|共5页
作者
K. Morigaki; H. Hikita;
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作者单位

C-305, Wakabadai 2-12, Inagi, Tokyo 206-0824, Japan;

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原文格式 PDF
正文语种 eng
中图分类固体物理学;
关键词
A. Disordered system; A. Amorphous semiconductors; D. Recombination and trapping; D. Light-induced phenomena;

机译：系统混乱;A.非晶半导体;D.重组和诱捕;D．光诱导现象;

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Light-induced creation of hydrogen-pairs in a-Si:H

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