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首页> 外文期刊>Solid State Communications >Field emission from a-GaN films deposited on Si (100)
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Field emission from a-GaN films deposited on Si (100)

机译：沉积在Si（100）上的a-GaN膜的场发射

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摘要

Amorphous gallium nitride (a-GaN) films have been deposited on Si (100) substrates using ion-assisted deposition. The deposited films were characterised by X-ray diffraction (XRD) and atomic force microscopy (AFM). XRD confirms the amorphous nature of the films and AFM showed nanostructures in the films. The field electron emission from the film was obtained in a probe-hole field emission microscope, and the current-voltage (I-V) characteristics were studied. The corresponding Fowler-Nordheim (F-N) plots showed a linear behaviour. A current density of 0.1 A/cm~2 has been obtained for 1.2 V/μm electric field. The field emission current-time (I-t), curves were recorded at a current level of 500 nA for 3 h. The field emission behaviour is compared with that of crystalline GaN as reported in literature.
机译：非晶态氮化镓（a-GaN）膜已使用离子辅助沉积法沉积在Si（100）衬底上。通过X射线衍射（XRD）和原子力显微镜（AFM）表征沉积的膜。 XRD证实了膜的无定形性质，并且AFM显示了膜中的纳米结构。在探针孔场发射显微镜中获得了薄膜的场电子发射，并研究了电流-电压（I-V）特性。相应的Fowler-Nordheim（F-N）图显示出线性行为。对于1.2 V /μm的电场，已获得0.1 A / cm〜2的电流密度。在500 nA的电流水平下记录了3小时的场发射电流-时间（I-t）曲线。如文献报道，将场致发射行为与晶体GaN进行比较。

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