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首页> 外文期刊>Solid State Communications >Formation process for and strain effect in InAs quantum dots grown on GaAs substrates by using molecular beam epitaxy
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Formation process for and strain effect in InAs quantum dots grown on GaAs substrates by using molecular beam epitaxy

机译：利用分子束外延在GaAs衬底上生长的InAs量子点的形成过程和应变效应

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摘要

Reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM) measurements were used to investigate the dependences of the formation process and the strain on the As/In ratio and the substrate temperature of InAs quantum dots (QDs) grown on GaAs substrates by using molecular beam epitaxy. The thickness of the InAs wetting layer and the shape and the size of the InAs QDs were significantly affected by the As/In ratio and the substrate temperature. The strains in the InAs layer and the GaAs substrate were studied by using RHEED patterns. The magnitude in strain of the InAs QDs formed at a low substrate temperature was larger than that in InAs QDs grown at high substrate temperature. The present results can help to improve the understanding of the formation process and the strain effect in InAs QDs.
机译：使用反射高能电子衍射（RHEED）和原子力显微镜（AFM）测量来研究形成过程和应变对在GaAs上生长的InAs量子点（QD）的As / In比和衬底温度的依赖性通过使用分子束外延衬底。 InAs浸润层的厚度以及InAs QD的形状和大小受As / In比和衬底温度的影响很大。使用RHEED图案研究了InAs层和GaAs衬底中的应变。在低衬底温度下形成的InAs QD的应变幅度大于在高衬底温度下生长的InAs QD的应变幅度。目前的结果可以帮助提高对InAs量子点中形成过程和应变效应的理解。

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