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首页> 外文期刊>Solid-State Electronics >Comparative study on performance of AlGaN/GaN MS-HEMTs with SiN SiO_x, and SiNO surface passivation
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Comparative study on performance of AlGaN/GaN MS-HEMTs with SiN SiO_x, and SiNO surface passivation

机译：AlGaN / GaN MS-HEMTS与SIN SIO_X的性能的比较研究，以及中域钝化

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摘要

A comparative investigation on device characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) with SiNx, SiOx, and SiON passivation by using plasma enhanced chemical vapor deposition (PECVD) technique is conducted. The electrical performance of passivated GaN HEMTs are evaluated through DC current-voltage, pulsed current-voltage, and small-signal measurements. Obvious increases of 10.5% in drain current and of 8.6% in transconductance are observed for SiON passivated HEMT as compared with both the SiOx and SiNx passivated HEMTs. The SiOx passivated device is found to have lowest gate leakage current as well as off-state drain leakage current as compared to SiNx and SiON passivated devices. However, the pulsed I-V measurement shows a severe current collapse for SiOx passivated HEMT caused by the introducing of deep traps when compared with the SiNx and SiON passivated devices. Moreover, the small-signal measurement shows that the SiON passivated HEMT has a higher cut-off frequency due to the improvement in transconductance, which makes it a promising passivation layer for GaN based high power HEMT applications.
机译：通过使用等离子体增强化学气相沉积（PECVD）技术进行了使用SINX，SiOx和SiON钝化的AlGaN / GaN高电子迁移率晶体管（HEMT）器件特性的对比研究。通过直流电流 - 电压，脉冲电流 - 电压和小信号测量评估钝化GaN HEMT的电性能。与SIOX和SINX钝化的HEMT相比，SION钝化HEMT，观察到漏极电流和跨导的漏极电流和8.6％的明显增加10.5％。与SINX和SION钝化设备相比，发现SIOx钝化装置具有最低栅极漏电流以及断路器漏电流。然而，脉冲I-V测量显示了由SINX和SION钝化装置相比引入深疏水阀引起的SIOx钝化HEMT的严重电流崩溃。此外，小信号测量表明，由于跨导的改善，SiON钝化的HEMT具有更高的截止频率，这使其成为GaN的高功率HEMT应用的有望的钝化层。

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  • 来源
    《Solid-State Electronics》 |2020年第8期|107824.1-107824.5|共5页
  • 作者

    Cheng Kai-Yuan; Wu Shang-Chi; Yu Chia-Jui; Wang Tong-Wen; Liao Jyun-Hao; Wu Meng-Chyi;

  • 作者单位

    Natl Tsing Hua Univ Dept Elect Engn Hsinchu 30013 Taiwan;

    Natl Tsing Hua Univ Dept Elect Engn Hsinchu 30013 Taiwan;

    Natl Tsing Hua Univ Dept Elect Engn Hsinchu 30013 Taiwan;

    Feng Chia Univ Dept Elect Engn Taichung 40724 Taiwan;

    Natl Tsing Hua Univ Dept Elect Engn Hsinchu 30013 Taiwan;

    Natl Tsing Hua Univ Dept Elect Engn Hsinchu 30013 Taiwan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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