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首页> 外文期刊>Solid-State Electronics >Nanometer patterning of epitaxial CoSi_2/Si(100) by local oxidation
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Nanometer patterning of epitaxial CoSi_2/Si(100) by local oxidation

机译：外延氧化CoSi_2 / Si（100）的纳米图形

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摘要

Nanometer patterning of single crystalline CoSi_2 layers on Si(100) by local oxidation was studied. Epitaxial CoSi_2 layers with thicknesses around 20 nm were grown on Si(100) by molecular beam allotaxy. A nitride layer was deposited on the surface of the silicide and subsequently patterned along the 〈110〉direction by optical lithography and dry etching. Rapid thermal oxidation was then performed at a temperature of 950℃ in dry O_2 ambient. During oxidation SiO_2 forms on the unprotected regions of the CoSi_2 layer. The silicide in this region is pushed into the substrate. Near the edges of the nitride mask the silicide layer thins and finally separates from the protected part. Using this patterning method highly uniform gaps with a width of 70 nm between the two silicide layers have been obtained. It was shown that the separation gap is not only dependent on the oxidation parameters, but also on the thickness and the width of the nitride mask due to the stress effects. Possible applications of this new technique are discussed.
机译：研究了局部氧化在Si（100）上单晶CoSi_2层的纳米图案。通过分子束吸附在Si（100）上生长了厚度约为20 nm的外延CoSi_2层。氮化物层沉积在硅化物的表面上，随后通过光学光刻和干法蚀刻沿着＆ 110＆方向图案化。然后在干燥的O_2环境中在950℃的温度下进行快速热氧化。在氧化过程中，SiO_2形成在CoSi_2层的未保护区域上。该区域中的硅化物被推入衬底中。在氮化物掩模的边缘附近，硅化物层变薄并最终与受保护部分分离。使用这种构图方法，已经在两个硅化物层之间获得了宽度为70nm的高度均匀的间隙。结果表明，分离间隙不仅取决于氧化参数，而且取决于应力效应，还取决于氮化物掩模的厚度和宽度。讨论了这种新技术的可能应用。

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