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Emerging memories

机译：新兴记忆

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摘要

Memory is a key component of any data processing system. Following the classical Turing machine approach, memories hold both the data to be processed and the rules for processing them. In the history of microelectronics, the distinction has been rather between working memory, which is exemplified by DRAM, and storage memory, exemplified by NAND. These two types of memory devices now represent 90% of all memory market and 25% of the total semiconductor market, and have been the technology drivers in the last decades. Even if radically different in characteristics, they are however based on the same storage mechanism: charge storage, and this mechanism seems to be near to reaching its physical limits. The search for new alternative memory approaches, based on more scalable mechanisms, has therefore gained new momentum. The status of incumbent memory technologies and their scaling limitations will be discussed. Emerging memory technologies will be analyzed, starting from the ones that are already present for niche applications, and which are getting new attention, thanks to recent technology breakthroughs. Maturity level, physical limitations and potential for scaling will be compared to existing memories. At the end the possible future composition of memory systems will be discussed.
机译：内存是任何数据处理系统的关键组成部分。遵循经典的图灵机方法，存储器既保存要处理的数据，又保存处理数据的规则。在微电子学的历史上，区别在于工作存储器（以DRAM为例）和存储存储器（以NAND为例）之间。这两种类型的存储设备现在分别占所有存储市场的90％和整个半导体市场的25％，并且在过去几十年中一直是技术驱动力。即使特性在根本上有所不同，但是它们基于相同的存储机制：电荷存储，并且该机制似乎已接近其物理极限。因此，基于更具可扩展性的机制，寻找新的替代内存方法已获得了新的动力。将讨论现有内存技术的现状及其扩展限制。从新兴的内存技术开始，将分析新兴的内存技术，这些技术由于最近的技术突破而受到了新的关注。成熟度级别，物理限制和扩展潜力将与现有内存进行比较。最后，将讨论存储系统未来可能的组成。

著录项

  • 来源
    《Solid-State Electronics》 |2014年第12期|2-11|共10页
  • 作者

    Livio Baldi; Roberto Bez; Gurtej Sandhu;

  • 作者单位

    Micron Semiconductor Italia, via C. Olivetti, 2, 20864 Agrate Brianza, Italy;

    Micron Semiconductor Italia, via C. Olivetti, 2, 20864 Agrate Brianza, Italy;

    Micron Technology Inc., 8000 S. Federal Way PO Box 6, Boise, ID 83707-0006, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Memory; Flash; DRAM; Mass storage; Emerging memories;

    机译：记忆;闪;DRAM;大容量存储;新兴记忆;

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