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Comparative study of NSB and UTB SOI MOSFETs characteristics by extraction of series resistance

机译：通过提取串联电阻比较NSB和UTB SOI MOSFET特性的比较研究

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摘要

The electrical characteristics of two kinds of n-type SOI-MOSFETs are analyzed and compared in order to build a consistent model. The first kind is an Ultra-Thin Body (UTB) device for which the channel thickness is equal to the initial SOI wafer thickness value (here 46 nm). The second kind is what we refer to Nano-Scale Body (NSB) device for which the initial SOI channel is thinned down to 1.6 nm using a recessed-gate process. The drain current values were found surprisingly different by three orders of magnitude. Such a huge contrast was not found coherent with the literature, reporting the decrease of the electron mobility with the channel thickness. We interpret our result by the probable influence of an extreme drain-to-source series resistance rather than by vanishing carrier mobility. The interpretation is sustained experimentally by the R_m-L and C-V methods. By integrating a gate-voltage dependence to the series resistance, the linear and saturation regions of the output characteristics of the NSB can be analytically derived from the UTB ones. This simple modeling approach may be useful to interpret anomalous electrical behavior of other nano-devices in which series resistance is of a great concern.
机译：为了建立一致的模型，对两种n型SOI-MOSFET的电特性进行了分析和比较。第一种是超薄体（UTB）器件，其沟道厚度等于初始SOI晶片厚度值（此处为46 nm）。第二种是我们所称的纳米尺度体（NSB）器件，其初始SOI通道使用凹栅工艺被减薄至1.6 nm。发现漏极电流值出人意料地相差三个数量级。与文献没有发现如此巨大的对比，文献报道了电子迁移率随沟道厚度的降低。我们通过极端的漏源串联电阻的可能影响而不是通过消失载流子迁移来解释我们的结果。该解释通过R_m-L和C-V方法在实验上得以维持。通过将栅极电压对串联电阻的依赖性积分，可以从UTB的分析得出NSB输出特性的线性和饱和区域。这种简单的建模方法可能对解释串联电阻非常重要的其他纳米器件的异常电学行为很有用。

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