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首页> 外文期刊>Solid-State Electronics >Two-step annealing effects on ultrathin EOT higher-k (k = 40) ALD-HfO_2 gate stacks
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Two-step annealing effects on ultrathin EOT higher-k (k = 40) ALD-HfO_2 gate stacks

机译：两步退火对超薄EOT高k（k = 40）ALD-HfO_2栅堆叠的影响

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摘要

Ultrathin HfO_2 gate stacks with very high permittivity were fabricated by atomic layer deposition (ALD) and a novel two-step post-deposition annealing (PDA) technique. First, a no-cap pre-crystallization anneal degasses residual contaminations in the ALD layer, and second, a Ti-cap anneal enhances the permittivity of HfO_2 by generating a cubic crystal phase. The Ti-cap layer simultaneously suppresses growth of interfacial SiO_2 during annealing by absorbing residual oxygen released from HfO_2. Using these techniques, the dielectric constant of the ALD-HfO_2 could be enhanced to 40 for 2.4-4.0 nm HfO_2 thickness.
机译：通过原子层沉积（ALD）和新颖的两步后沉积退火（PDA）技术制造了具有非常高的介电常数的超薄HfO_2栅堆叠。首先，无盖预结晶退火使ALD层中的残留污染物脱气，其次，Ti盖退火通过生成立方晶相提高HfO_2的介电常数。 Ti-盖层通过吸收从HfO_2释放的残余氧气，同时抑制了退火过程中界面SiO_2的生长。使用这些技术，对于2.4-4.0 nm HfO_2厚度，可以将ALD-HfO_2的介电常数提高到40。

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  • 来源
    《Solid-State Electronics》 |2013年第6期|58-64|共7页
  • 作者

    Yukinori Morita; Shinji Migita; Wataru Mizubayashi; Meishoku Masahara; Hiroyuki Ota;

  • 作者单位

    Green Nanoelectronics Center (GNC), Nanoelectmnics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba West SCR, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan;

    Green Nanoelectronics Center (GNC), Nanoelectmnics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba West SCR, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan;

    Green Nanoelectronics Center (GNC), Nanoelectmnics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba West SCR, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan;

    Green Nanoelectronics Center (GNC), Nanoelectmnics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba West SCR, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan;

    Green Nanoelectronics Center (GNC), Nanoelectmnics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba West SCR, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    High-k; HfO_2; ALD; Cubic; PDA; EOT;

    机译：高k;HfO_2;ALD;立方体;PDA;EOT;

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