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首页> 外文期刊>Solid-State Electronics >Gate leakage and electrical performance of AlGaN/GaN MIS-type HFET with evaporated silicon oxide layer
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Gate leakage and electrical performance of AlGaN/GaN MIS-type HFET with evaporated silicon oxide layer

机译：具有蒸发氧化硅层的AlGaN / GaN MIS型HFET的栅极泄漏和电性能

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摘要

The reduction of gate leakage current in AlGaN/GaN metal-insulator-semiconductor (MIS) heterostructure field effect transistors (HFETs) is influenced by the resistance of the insulating layers and even more so by the increase in AlGaN layer resistance. Electrical performance of AlGaN/GaN HFETs with and without electron beam evaporated SiO_X gate insulator layers indicates that the AlGaN layer resistance is increased seven orders of magnitude by oxide evaporation at negative gate bias. Also, the transconductance frequency dispersion of the MIS-HFET can be explained with a model in which the insulator is more conductive than the AlGaN layer, though they are both highly resistive. These results indicate that the deposition of the oxide reduces electron leakage through the AlGaN layer in the direction from the AlGaN surface to the GaN layer.
机译：AlGaN / GaN金属绝缘体半导体（MIS）异质结构场效应晶体管（HFET）中栅极泄漏电流的减小受绝缘层电阻的影响，甚至受AlGaN层电阻的增加的影响更大。具有和不具有电子束蒸发的SiO_X栅极绝缘层的AlGaN / GaN HFET的电性能表明，通过在负栅极偏压下进行氧化物蒸发，AlGaN层电阻增加了七个数量级。同样，可以用模型解释MIS-HFET的跨导频率色散，其中绝缘体比AlGaN层更导电，尽管它们都具有高电阻。这些结果表明，氧化物的沉积减少了从AlGaN表面到GaN层的方向上通过AlGaN层的电子泄漏。

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