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首页> 外文期刊>Solid-State Electronics >A high-power AlGaN/GaN heterojunction field-effect transistor
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A high-power AlGaN/GaN heterojunction field-effect transistor

机译：高功率AlGaN / GaN异质结场效应晶体管

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摘要

We fabricated an AlGaN/GaN heterojunction field effect transistor (HFET) with a very low on-state resistance. An undoped Al_(0.2)Ga_(0.8)N(30 nm)/GaN(2μm) heterostructure was grown on a sapphire substrate using gas-source molecular-beam epitaxy. The undoped GaN layer had a high resistivity (above 10 MΩ) and the breakdown field of the undoped layer was about 2 MV/cm. Si-doped GaN with a carrier concentration of 5 x 10~(19) cm~(-3) was selectively grown in the source and drain regions for obtaining a very low contact resistance. As a result, a very low ohmic below 1 x 10~(-7)Ω cm~2 was obtained. After that, an Al_(0.2)Ga_(0.8)N/GaN HFET was fabricated. The gate width was 20 cm and the gate length was 2μm. The ohmic electrode materials were Al/Ti/Au and the Schottky electrodes were Pt/Au. The distance between the source and the drain was 13 μm. The HFET was operated at a current of over 20 A. A higher switching speed of HFET was obtained.
机译：我们制造了具有非常低导通电阻的AlGaN / GaN异质结场效应晶体管（HFET）。使用气体源分子束外延在蓝宝石衬底上生长了未掺杂的Al_（0.2）Ga_（0.8）N（30 nm）/ GaN（2μm）异质结构。未掺杂的GaN层具有高电阻率（10MΩ以上），并且未掺杂的层的击穿场为约2MV / cm。在源区和漏区中选择性地生长了载流子浓度为5 x 10〜（19）cm〜（-3）的Si掺杂的GaN，以获得非常低的接触电阻。结果，获得了低于1×10〜（-7）Ωcm〜2的非常低的欧姆。之后，制造了Al_（0.2）Ga_（0.8）N / GaN HFET。栅极宽度为20 cm，栅极长度为2μm。欧姆电极材料为Al / Ti / Au，肖特基电极为Pt / Au。源极与漏极之间的距离为13μm。 HFET在超过20 A的电流下工作。HFET的开关速度更高。

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