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0.25 μm fully depleted SOI MOSFETs for RF mixed analog-digital circuits, including a comparison with partially depleted devices with relation to high frequency noise parameters

机译：0.25μm全耗尽SOI MOSFET，用于RF混合模拟数字电路，包括与部分耗尽器件的高频噪声参数相关的比较

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摘要

The purpose of this paper is to completely describe the low and high frequency performance including microwave noise parameters of 0.25 μm fully depleted (FD) silicon-on-insulator (SOI) devices and to compare the noise perfor- mance with 0.25 μm partially depleted (PD) devices. These FD devices present a state of the art NF_min of 0.8 dB and high G_ass of 13 dB at 6GHz, at V_ds = 0.75 V, P_dc ＜3 mW at 80 μm total gate width. A extrapolated maximum os- cillation frequency of about 70 GHz has been obtained at V_ds = 1 V and J_ds = 100 mA/mm.
机译：本文的目的是完整描述0.25μm完全耗尽（FD）绝缘体上硅（SOI）器件的微波性能，包括微波噪声参数，并比较0.25μm部分耗尽的噪声性能（ PD）设备。这些FD器件在V_ds = 0.75 V，总栅极宽度为80μm时，P_dc ＜3 mW，在6GHz时具有NF_min为0.8 dB的先进技术，高G_ass为13 dB。在V_ds = 1 V和J_ds = 100 mA / mm的情况下，获得了大约70 GHz的外推最大振荡频率。

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