Effect of gamma-ray irradiation on the device process-induced defects in 4H-SiC epilayers

T. Miyazaki; T. Makino; A. Takeyama; S. Onoda; T. Ohshima; Y. Tanaka; M. Kandori; T. Yoshie; Y. Hijikata

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Effect of gamma-ray irradiation on the device process-induced defects in 4H-SiC epilayers

机译：γ射线辐照对器件过程中4H-SiC外延层缺陷的影响

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We investigated the gamma-ray irradiation effect on 4H-SiC device process-induced defects by photoluminescence (PL) imaging and deep level transient spectroscopy (DLTS). We found that basal plane dislocations (BPDs) that were present before the irradiation were eliminated by gamma-ray irradiation of 1 MGy. The reduction mechanism of BPD was discussed in terms of BPD-threading edge dislocation (TED) transformation and shrinkage of stacking faults. In addition, the entire PL image was gradually darkened with increasing absorbed dose, which is presumably due to the point defects generated by gamma-ray irradiation. We obtained DLTS peaks that could be assigned to complex defects, termed RD series, and found that the peaks increased with absorbed dose.

机译：我们通过光致发光（PL）成像和深能级瞬态光谱（DLTS）研究了伽玛射线对4H-SiC器件工艺引起的缺陷的影响。我们发现，通过1 MGy的伽马射线辐照消除了辐照前存在的基底平面位错（BPD）。从BPD-线程边缘错位（TED）变换和堆垛层错收缩的角度讨论了BPD的减少机制。另外，随着吸收剂量的增加，整个PL图像逐渐变暗，这可能是由于伽马射线辐照产生的点缺陷。我们获得了可归因于复杂缺陷的DLTS峰，称为RD系列，发现该峰随吸收剂量的增加而增加。

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来源
《Superlattices and microstructures》 |2016年第11期|197-201|共5页
作者
T. Miyazaki; T. Makino; A. Takeyama; S. Onoda; T. Ohshima; Y. Tanaka; M. Kandori; T. Yoshie; Y. Hijikata;
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作者单位

Saitama University, Sakura-ku, Saitama 338-8570, Japan;

Japan Atomic Energy Agency, Takasaki 370-1292, Japan;

Japan Atomic Energy Agency, Takasaki 370-1292, Japan;

Japan Atomic Energy Agency, Takasaki 370-1292, Japan;

Japan Atomic Energy Agency, Takasaki 370-1292, Japan;

Sanken Electric, Niiza, Saitama 352-8666, Japan;

Sanken Electric, Niiza, Saitama 352-8666, Japan;

Sanken Electric, Niiza, Saitama 352-8666, Japan;

Saitama University, Sakura-ku, Saitama 338-8570, Japan;

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正文语种 eng
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关键词
4H-SiC; Gamma-ray irradiation; Photoluminescence (PL) imaging; Basal plane dislocation (BPD); Stacking fault; Deep level transient spectroscopy (DLTS);

机译：4H-SiC;伽马射线照射;光致发光（PL）成像;基底平面脱位（BPD）;堆垛层错;深层瞬态光谱法（DLTS）;

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专利

1. Point Defects in 4H-SiC Epilayers Introduced by 4.5 MeV Electron Irradiation and Their Effect on Power JBS SiC Diode Characteristics [J] . Pavel Hazdra, Vít Záhlava, Jan Vobecky Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2014,第Null期

机译：4.5 MeV电子辐照引起的4H-SiC外延层中的点缺陷及其对功率JBS SiC二极管特性的影响
2. Point defects in 4H-SiC epilayers introduced by neutron irradiation [J] . Pavel Hazdra, Vit Zahlava, Jan Vobecky Nuclear Instruments & Methods in Physics Research . 2014,第maya15期

机译：中子辐照引起的4H-SiC外延层中的点缺陷
3. Radiation defects produced in 4H-SiC epilayers by proton and alpha-particle irradiation [J] . Pavel Hazdra, Vit Zahlava, Jan Vobecky, Materials science forum . 2013,第期

机译：质子和α粒子辐照在4H-SiC外延层中产生的辐照缺陷
4. Point Defects in 4H-SiC Epilayers Introduced by 4.5 MeV Electron Irradiation and Their Effect on Power JBS SiC Diode Characteristics [C] . Pavel Hazdra, Vit Zahlava, Jan Vobecky Internationalonference on Gettering and Defect Engineering in Semiconductor Technology . 2014

机译：4H-SIC脱落器中的点缺陷引入4.5MeV电子照射及其对功率JBS SIC二极管特性的影响
5. Defect Characterization of 4H-SiC by Deep Level Transient Spectroscopy (DLTS) and Influence of Defects on Device Performance [D] . Mannan, Mohammad Abdul 2015

机译：用深层瞬态光谱法（DLTS）表征4H-SiC的缺陷及其对器件性能的影响
6. High-Performance Temperature Sensors Based on Dual 4H-SiC JBS and SBD Devices [O] . Seong-Ji Min, Myeong Cheol Shin, Ngoc Thi Nguyen, 2020

机译：基于双4H-SiC JBS和SBD器件的高性能温度传感器
7. Deep level transient spectroscopy on as-grown and electron-irradiated p-type 4H-SiC epilayers [O] . Danno K, Kimoto T 2007

机译：生长和电子辐照的p型4H-SiC外延层的深层瞬态光谱
8. Lifetime-limiting Defects in n(-) 4H-SiC Epilayers. [R] . Klein, P. B., Shanabrook, B. V., Huh, S. W., 2006

机译：n（ - ）4H-siC外延层的寿命限制缺陷。

Effect of gamma-ray irradiation on the device process-induced defects in 4H-SiC epilayers

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