• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Terahertz Science and Technology, IEEE Transactions on >MOSFET Characteristics for Terahertz Detector Application From On-Wafer Measurement
【24h】

MOSFET Characteristics for Terahertz Detector Application From On-Wafer Measurement

机译：晶圆上测量的太赫兹检测器应用的MOSFET特性

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In this paper, we report on MOSFET characteristics for terahertz (THz) detector application from precise on-wafer measurement, and the results are compared with theories and SPICE simulations. Techniques for precise measurement using a vector network analyzer and on-wafer probing and simulation based on the SPICE model are introduced. Several MOSFETs in various channel dimensions are fabricated in 65-nm CMOS technology and measured over gate bias voltage and the operating frequencies of 110, 200, and 300 GHz using the lock-in technique. The behavior of responsivity and noise equivalent power (NEP) depending on the channel width and length of the MOSFET and the frequency are investigated, and trends of the obtained results are in good agreement with the theories and the simulations. The channel width dependence of the responsivity of the MOSFET detector is evaluated and explained for the first time. The results of this work can provide a reliable and useful reference for the design of THz detectors.
机译：在本文中，我们通过精确的晶圆上测量报告了太赫兹（THz）检测器应用的MOSFET特性，并将结果与​​理论和SPICE仿真进行了比较。介绍了使用矢量网络分析仪进行精确测量的技术以及基于SPICE模型的晶圆上探测和仿真技术。采用65 nm CMOS技术制造了各种沟道尺寸的多个MOSFET，并使用锁定技术在栅极偏置电压和110、200和300 GHz的工作频率上进行了测量。研究了响应性和噪声等效功率（NEP）的行为，该行为取决于MOSFET的沟道宽度和长度以及频率，并且所得结果的趋势与理论和仿真吻合良好。首次评估并解释了MOSFET检测器的响应度对沟道宽度的依赖性。这项工作的结果可以为THz检测器的设计提供可靠和有用的参考。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号