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首页> 外文期刊>Thin Solid Films >Exploring the photo paper as flexible substrate for fabrication of a-Si:H based thin film solar cells at low temperature (110 ℃): Influence of radio frequency power on opto-electronic properties
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Exploring the photo paper as flexible substrate for fabrication of a-Si:H based thin film solar cells at low temperature (110 ℃): Influence of radio frequency power on opto-electronic properties

机译：在低温（110℃）下探索用作制造a-Si：H基薄膜太阳能电池的柔性基板的照片纸：射频功率对光电性能的影响

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摘要

The effect of variation of radio frequency (rf) power on the structural, optical and electronic properties of intrinsic hydrogenated amorphous silicon (a-Si:H) films deposited at very low substrate temperature (T-s) 110 degrees C were studied. These films were prepared varying rf power (40-70 W) on borosilicate glass, photo paper and c-Si substrates using rf-plasma enhanced chemical vapour deposition (13.56 MHz) technique. All films show amorphous structure confirmed by Raman measurement and also supported by spectroscopic ellipsometry (SE) measurements. SE results show that at higher rf power, amplitude of peak decreases and broadening increases due to increase in void density. Intrinsic layer with optimized rf power was used for fabricating n-i-p solar cell on flexible polyethylene terephthalate (PET), polyimide (PI), photo paper and rigid glass. The efficiency of solar cells fabricated on flexible PET and PI is 3.30% and 3.36%, which is close to 3.82% on rigid glass. In case of solar cells on photo paper, an efficiency of similar to 1.08% was obtained. The studies show that it is possible to fabricate a-Si:H based solar cells on photo paper and other substrates at very low T-s.
机译：研究了射频（rf）功率变化对在非常低的衬底温度（T-s）110摄氏度下沉积的本征氢化非晶硅（a-Si：H）膜的结构，光学和电子性能的影响。使用射频等离子体增强化学气相沉积（13.56 MHz）技术，在硼硅酸盐玻璃，相纸和c-Si基板上以不同的射频功率（40-70 W）制备了这些薄膜。所有膜均显示出通过拉曼测量确认的非晶结构，并且还通过光谱椭圆偏振（SE）测量得到支持。 SE结果表明，在较高的rf功率下，由于空隙密度的增加，峰的幅度减小，而展宽的幅度增大。具有最佳射频功率的本征层用于在柔性聚对苯二甲酸乙二醇酯（PET），聚酰亚胺（PI），相纸和硬质玻璃上制造n-i-p太阳能电池。在柔性PET和PI上制造的太阳能电池的效率分别为3.30％和3.36％，在刚性玻璃上接近3.82％。在相纸上使用太阳能电池的情况下，效率接近1.08％。研究表明，有可能以非常低的T-s在相纸和其他基板上制造基于a-Si：H的太阳能电池。

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