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Influence of deposition distance and substrate temperature on the CdSe thin films deposited by electron beam evaporation technique

机译：沉积距离和衬底温度对电子束蒸发沉积CdSe薄膜的影响

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Cadmium Selenide (CdSe) thin films were deposited on the microslide glass substrates by electron beam evaporation technique at source to substrate distance (D-d) of 10 cm and 15 cm and at different substrate temperatures (room temperature to 450 C). The influence of D-d and substrate temperature on the structural, optical and morphological properties of CdSe thin films was studied. X-ray diffraction studies revealed that CdSe films deposited at 10 cm and 15 cm and at different substrate temperatures possess hexagonal crystal system with preferential growth along (002) plane. Further the effect of D-d and substrate temperature on the microstructural parameters such as crystallite size, strain, dislocation density and lattice constants was studied. CdSe films deposited at D-d 10 cm and 15 cm and at 150 C acquired low strain and dislocation density with respect to that of the other films. The optical transmittance of the film deposited at D-d 10 cm and at 350 degrees C showed maximum transmittance of about 98% at 875 nm whereas the film deposited at D-d 15 cm and at room temperature showed maximum transmittance of about 84% at 747 nm. Direct optical band gap energy of the films deposited at D-d 10 CM is decreased with increase in substrate temperature. Scanning electron microscope studies revealed that the surface of the CdSe film deposited at D-d 10 cm and at room temperature contains spherical shaped grains distributed on the surface and the surface becomes smooth with increase in substrate temperature. Surface of the film deposited at D-d 15 cm and at room temperature showed fine grains with a few pinholes whereas the surface of the film deposited at 250 C and 350 C become rough with pinholes. Elemental analysis showed the presence of cadmium and selenium in the deposited thin films. Photoluminescence spectrum showed red emission band at similar to 740 nm for the films deposited at D-d 10 cm and 15 cm and at room temperature, 150 degrees C and 450 degrees C. (C) 2017 Elsevier B.V. All rights reserved.
机译：硒化镉（CdSe）薄膜通过电子束蒸发技术在源到基板的距离（D-d）为10 cm和15 cm以及不同的基板温度（室温到450°C）下沉积在微片玻璃基板上。研究了D-d和衬底温度对CdSe薄膜结构，光学和形貌特性的影响。 X射线衍射研究表明，在10 cm和15 cm以及不同的衬底温度下沉积的CdSe膜具有六角晶系，并沿（002）面优先生长。进一步研究了D-d和衬底温度对微结构参数如晶粒尺寸，应变，位错密度和晶格常数的影响。在D-d 10 cm和15 cm处以及150°C下沉积的CdSe膜相对于其他膜具有较低的应变和位错密度。在D-d 10 cm和350摄氏度下沉积的薄膜的光学透射率在875 nm处显示约98％的最大透射率，而在D-d 15 cm和室温下沉积的膜在747 nm处的最大透射率约为84％。随着衬底温度的升高，在D-d 10 CM处沉积的薄膜的直接光学带隙能量降低。扫描电子显微镜研究表明，在D-d 10cm处和室温下沉积的CdSe膜的表面含有分布在表面上的球形晶粒，并且随着基板温度的升高表面变得光滑。在D-d 15 cm处和室温下沉积的膜表面显示出具有几个针孔的细晶粒，而在250℃和350℃下沉积的膜表面则变得粗糙且带有针孔。元素分析表明，沉积的薄膜中存在镉和硒。对于在D-d 10 cm和15 cm以及在室温，150摄氏度和450摄氏度下沉积的薄膜，光致发光光谱显示出类似于740 nm的红色发射带。（C）2017 Elsevier B.V.保留所有权利。

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