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Thin film thickness measurements using Scanning White Light Interferometry

机译:使用扫描白光干涉仪测量薄膜厚度

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Scanning White Light Interferometry is a well-established technique for providing accurate surface roughness measurements and three dimensional topographical images. Here we report on the use of a variant of Scanning White Light Interferometry called coherence correlation interferometry which is now capable of providing accurate thickness measurements from transparent and semi-transparent thin films with thickness below 1 μm. This capability will have many important applications which include measurements on optical coatings, displays, semiconductor devices, transparent conducting oxides and thin film photovoltaics. In this paper we report measurements of thin film thickness made using coherence correlation interferometry on a variety of materials including metal-oxides (Nb_2O_5 and ZrO_2), a metal-nitride (SiN_x:H), a carbon-nitride (SiC_xN_y:H) and indium tin oxide, a transparent conducting oxide. The measurements are compared with those obtained using spectroscpic ellipsometry and in all cases excellent correlation is obtained between the techniques. A key advantage of this capability is the combination of thin film thickness and surface roughness and other three-dimensional metrology measurements from the same sample area.
机译:扫描白光干涉测量法是一种行之有效的技术,可提供准确的表面粗糙度测量结果和三维形貌图。在这里,我们报告了一种称为相干相关干涉测量法的扫描白光干涉测量法的变体,该方法现在可以从厚度小于1μm的透明和半透明薄膜中提供准确的厚度测量。此功能将具有许多重要的应用,包括对光学涂层,显示器,半导体器件,透明导电氧化物和薄膜光伏电池的测量。在本文中,我们报告了使用相干相关干涉术对包括金属氧化物(Nb_2O_5和ZrO_2),金属氮化物(SiN_x:H),碳氮化物(SiC_xN_y:H)和铟锡氧化物,一种透明的导电氧化物。将测量结果与使用分光椭圆仪获得的结果进行比较,并且在所有情况下,这些技术之间均获得了极好的相关性。此功能的主要优势是将薄膜厚度和表面粗糙度与来自同一样品区域的其他三维度量衡测量相结合。

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