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首页> 外文期刊>Thin Solid Films >Crystallization and electrical characteristics of Ge_1Cu_2Te_3 films for phase change random access memory
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Crystallization and electrical characteristics of Ge_1Cu_2Te_3 films for phase change random access memory

机译：相变随机存取存储器的Ge_1Cu_2Te_3薄膜的结晶和电学特性

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摘要

Phase change random access memory (PCRAM) requires an advanced phase change material to lower its power consumption and to enhance its data retention and endurance abilities. The present work investigated the crystallization behaviors and electrical properties of Ge_1Cu_2Te_3 compound films with a low melting point of about 500 ℃ for PCRAM application. Sputter-deposited Ge_1Cu_2Te_3 amorphous films showed a high crystallization temperature of about 250 ℃ The Ge_1Cu_2Te_3 amorphous film showed an electrical resistance decrease of over 10~2-fold and exhibited a small increase in thickness of 2.0% upon crystallization. The Ge_1Cu_2Te_3 memory devices showed reversible switching behaviors and exhibited a 10% lower power consumption for the reset operation than the conventional Ge_2Sb_2Te_5 memory devices. Therefore, the Ge_1Cu_2Te_3 compound is a promising phase change material for PCRAM application.
机译：相变随机存取存储器（PCRAM）需要先进的相变材料以降低其功耗并增强其数据保留和持久能力。本文研究了低熔点约500℃的Ge_1Cu_2Te_3复合膜在PCRAM应用中的结晶行为和电学性能。溅射沉积的Ge_1Cu_2Te_3非晶膜具有约250℃的高结晶温度。Ge_1Cu_2Te_3非晶膜的电阻降低了10〜2倍以上，并且在晶化时厚度略有增加，仅为2.0％。与传统的Ge_2Sb_2Te_5存储设备相比，Ge_1Cu_2Te_3存储设备显示出可逆的开关行为，并且复位操作功耗降低了10％。因此，Ge_1Cu_2Te_3化合物是用于PCRAM应用的有前途的相变材料。

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  • 来源
    《Thin Solid Films》 |2012年第13期|p.4389-4393|共5页
  • 作者

    Toshiya Kamada; Yuji Sutou; Masashi Sumiya; Yuta Saito; Junichi Koike;

  • 作者单位

    Department of Materials Science, Graduate School of Engineering, Tohoku University, 6-6-11 Aoba-yama, Sendai 980-8579, Japan;

    Department of Materials Science, Graduate School of Engineering, Tohoku University, 6-6-11 Aoba-yama, Sendai 980-8579, Japan;

    Department of Materials Science, Graduate School of Engineering, Tohoku University, 6-6-11 Aoba-yama, Sendai 980-8579, Japan;

    Department of Materials Science, Graduate School of Engineering, Tohoku University, 6-6-11 Aoba-yama, Sendai 980-8579, Japan;

    Department of Materials Science, Graduate School of Engineering, Tohoku University, 6-6-11 Aoba-yama, Sendai 980-8579, Japan;

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  • 正文语种 eng
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  • 关键词

    phase change material; Ge-Cu-Te; crystallization; volume change; memory switching;

    机译：相变材料锗铜碲结晶;音量变化;内存切换;

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