...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Thin Solid Films >Influence of high temperature processing of sol-gel derived barium titanate thin films deposited on platinum and strontium ruthenate coated silicon wafers
【24h】

Influence of high temperature processing of sol-gel derived barium titanate thin films deposited on platinum and strontium ruthenate coated silicon wafers

机译：溶胶-凝胶衍生的钛酸钡薄膜沉积在铂和钌酸锶涂覆的硅片上的高温处理的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Thin films of barium titanate (BTO) of 200 nm thickness, derived from an alkoxide-carboxylate sol-gel process, were deposited on Pt/Ti and SrRuO_3/ZrO_2-8%Y_2O_3 coated Si wafers. Films with a dense columnar microstructure were obtained by repeated deposition of thin amorphous layers from low-concentrated sols, and crystallization at 800 ℃ This method added 10 nm thickness to the crystalline BTO film in each deposition step. The harsh processing conditions had a negative impact on the platinized silicon wafers, where Pt-Si silicides were formed. This led to diffusion of Si into BTO and interfacial silicate formation. The interfacial silicate layer was the cause of deteriorated dielectric and ferroelectric properties of the BTO layer. Use of SrRuO_3/ZrO_2-8%Y_2O_3/Si substrates solved the problem. No diffusion of Si was observed, and BTO films with good dielectric and ferroelectric properties were obtained.
机译：在Pt / Ti和SrRuO_3 / ZrO_2-8％Y_2O_3涂覆的Si晶片上沉积200纳米厚的钛酸钡（BTO）薄膜，该薄膜来自醇盐-羧酸盐溶胶-凝胶工艺。通过从低浓度溶胶中反复沉积薄的非晶态层，并在800℃结晶，获得具有致密柱状微观结构的薄膜。该方法在每个沉积步骤中为晶体BTO薄膜增加了10 nm的厚度。苛刻的加工条件对形成Pt-Si硅化物的镀铂硅片有负面影响。这导致Si扩散到BTO中并形成界面硅酸盐。界面硅酸盐层是导致BTO层的介电和铁电性能劣化的原因。使用SrRuO_3 / ZrO_2-8％Y_2O_3 / Si衬底可以解决该问题。没有观察到Si的扩散，并且获得了具有良好介电和铁电性能的BTO膜。

著录项

  • 来源
    《Thin Solid Films》 |2012年第13期|p.4394-4401|共8页
  • 作者

    Tomasz M. Stawski; Wouter J.C. Vijselaar; Ole F. Goebel; Sjoerd A. Veldhuis; Brian F. Smith; Dave HA Blank; Johan E. ten Elshof;

  • 作者单位

    MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands;

    MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands;

    MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands;

    MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands;

    MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands;

    MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands;

    MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    films; interfaces; sol-gel processes; BaTiO_3; SrRuO_3; dielectric properties;

    机译：电影;接口;溶胶-凝胶法;BaTiO_3;SrRuO_3;介电性能;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号