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首页> 外文期刊>Thin Solid Films >Ultra-shallow junctions formed by quasi-epitaxial growth of boron and phosphorous-doped silicon films at 175 ℃ by rf-PECVD
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Ultra-shallow junctions formed by quasi-epitaxial growth of boron and phosphorous-doped silicon films at 175 ℃ by rf-PECVD

机译：通过rf-PECVD在175℃下准外延生长硼和磷掺杂的硅膜而形成的超浅结

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摘要

In this paper, we use in-situ and ex-situ spectroscopic ellipsometry as an optical tool to optimize the process conditions that lead to epitaxial growth of undoped and doped silicon films in a standard radio-frequency Plasma Enhanced Chemical Vapor Deposition (rf-PECVD) reactor at temperatures below 200 ℃. The influence of the plasma conditions (such as pressure, inter-electrode distance, hydrogen dilution and dopant precursor gas concentration) on the nature of the films is studied. This optimization allows us to achieve epitaxial growth of phosphorous-doped and boron-doped silicon films at temperatures as low as 175 ℃ and 140 ℃, respectively. The epitaxial films possess thicknesses on the order of a few tens of nanometers, and sheet resistance values below 150 Ω/Π. Annealing in air at 275 ℃ helps to further improve the conductivity of boron-doped layers. Four-point probe sheet resistance measurements and secondary ion mass spectrometry profiles are used to assess the dopant profile in the epitaxial layers. The junctions thus obtained are also characterized through their application in a solar cell, resulting in a fill factor over 76% and an efficiency exceeding 14%.
机译：在本文中，我们使用原位和异位光谱椭圆仪作为光学工具，以优化导致标准射频等离子体增强化学气相沉积（rf-PECVD）中未掺杂和掺杂的硅膜外延生长的工艺条件）反应器温度低于200℃。研究了等离子体条件（如压力，电极间距离，氢稀释度和掺杂剂前体气体浓度）对薄膜性质的影响。这种优化使我们能够分别在低至175℃和140℃的温度下实现掺磷和掺硼硅膜的外延生长。外延膜具有几十纳米量级的厚度，并且薄层电阻值低于150Ω/Π。 275℃的空气中退火有助于进一步提高掺硼层的电导率。四点探针薄层电阻测量和二次离子质谱分析轮廓用于评估外延层中的掺杂剂轮廓。如此获得的结也通过在太阳能电池中的应用来表征，从而导致填充系数超过76％，效率超过14％。

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  • 来源
    《Thin Solid Films》 |2010年第9期|2528-2530|共3页
  • 作者

    M. Labrune; M. Moreno; P. Roca i Cabarrocas;

  • 作者单位

    Laboratoire de Physique des Interfaces et Couches Minces, CNRS-Ecole Fob/technique, Palaiseau, France TOTAL S.A., Gas & Power - R&D Division, Courbevoie, France;

    Laboratoire de Physique des Interfaces et Couches Minces, CNRS-Ecole Polytechnique, Palaiseau, France;

    Laboratoire de Physique des Interfaces et Couches Minces, CNRS-Ecole Polytechnique, Palaiseau, France;

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  • 正文语种 eng
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  • 关键词

    PECVD; silicon; epitaxy; shallow junction;

    机译：PECVD;硅;外延浅结;

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