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首页> 外文期刊>Thin Solid Films >Bulge Testing And Fracture Properties Of Plasma-enhanced Chemical Vapor Deposited Silicon Nitride Thin Films
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Bulge Testing And Fracture Properties Of Plasma-enhanced Chemical Vapor Deposited Silicon Nitride Thin Films

机译：等离子体增强化学气相沉积氮化硅薄膜的膨胀测试和断裂性能

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摘要

The mechanical properties and fracture behavior of silicon nitride (SiN_x) thin film fabricated by plasma-enhanced chemical vapor deposition is reported. Plane-strain moduli, prestresses, and fracture strengths of silicon nitride thin films deposited both on a bare Si substrate and on a thermally oxidized Si substrate were extracted using bulge testing combined with a refined load-deflection model of long rectangular membranes. The plane-strain moduli and prestresses of SiN_x thin films have little dependence on the substrates, that is, for the bare Si substrate, they are 133+19 GPa and 178±22 MPa, respectively, while for the thermally oxidized substrate, they are 140±26 GPa and 194±34 MPa, respectively. However, the fracture strength values of SiN_x films grown on the two substrates are quite different, i.e., 1.53±0.33 GPa and 3.08±0.79 GPa for the bare Si substrate and the oxidized Si substrate, respectively. The reference stresses were computed by integrating the local stress of the membrane at the fracture over the edge, surface, and volume of the specimens and fitted with the Weibull distribution function. For SiN_x thin film produced on the bare Si substrate, the volume integration gave a significantly better agreement between data and model, implying that the volume flaws are the dominant fracture origin. For SiN_x thin film grown on the oxidized Si substrate, the fit quality of surface and edge integration was significantly better than the volume integration, and the dominant surface and edge flaws could be caused by buffered HF attacking the SiN_x layer during SrO_2 removal.
机译：报道了通过等离子增强化学气相沉积法制备的氮化硅（SiN_x）薄膜的力学性能和断裂行为。利用凸出试验结合长矩形膜的改进的载荷-挠度模型，提取了沉积在裸露的Si衬底和热氧化的Si衬底上的氮化硅薄膜的平面应变模量，预应力和断裂强度。 SiN_x薄膜的平面应变模量和预应力对衬底的依赖性很小，即，对于裸露的Si衬底，其分别为133 + 19 GPa和178±22 MPa，而对于热氧化衬底，它们为分别为140±26 GPa和194±34 MPa。然而，在两个衬底上生长的SiN_x膜的断裂强度值是完全不同的，即，裸Si衬底和氧化Si衬底的1.53±0.33GPa和3.08±0.79GPa。参考应力是通过在样品的边缘，表面和体积上的裂缝处对膜的局部应力进行积分来计算的，并拟合了威布尔分布函数。对于在裸露的Si衬底上生产的SiN_x薄膜，体积积分使数据和模型之间的一致性更好，这表明体积缺陷是主要的断裂起点。对于在氧化的Si衬底上生长的SiN_x薄膜，表面和边缘集成的拟合质量显着优于体积集成，并且主要的表面和边缘缺陷可能是由于在SrO_2去除过程中缓冲的HF攻击SiN_x层而引起的。

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