Deposition of nanocryctalline silicon thin films: Effect of total pressure and substrate temperature

R. Baghdad; D. Benlakehal; X. Portier; K. Zellama; S. Charvet; J.D. Sib; M. Clin; L. Chahed

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Deposition of nanocryctalline silicon thin films: Effect of total pressure and substrate temperature

机译：纳米晶硅薄膜的沉积：总压力和衬底温度的影响

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The structural changes in intrinsic silicon thin films are investigated as a function of the total pressure (2 to 4 Pa) and substrate temperature (room temperature to 200 ℃). Infrared absorption, Raman spectroscopy and high resolution transmission electron microscopy are applied to characterize the films. The results indicate that the films grown at 2 Pa are completely amorphous, while at 3 and 4 Pa, crystallization occurs at temperature as low as room temperature. These structural changes are well correlated to the variation of the room temperature conductivity, which increases up to about eight orders of magnitude for the nanocrystallized films. A crystalline volume fraction varying from 71 to about 90% is also observed. The growth mechanism of the nanocrystalline films is also discussed in the framework of the reported models.

机译：研究了本征硅薄膜的结构变化与总压力（2-4 Pa）和衬底温度（室温至200℃）的关系。应用红外吸收，拉曼光谱和高分辨率透射电子显微镜对薄膜进行表征。结果表明，在2 Pa下生长的薄膜是完全非晶态的，而在3 Pa和4 Pa下，在低至室温的温度下会发生结晶。这些结构变化与室温电导率的变化具有良好的相关性，对于纳米晶化膜，该变化增加到大约八个数量级。还观察到晶体体积分数在71％至约90％之间变化。纳米晶体薄膜的生长机理也在所报道的模型的框架内进行了讨论。

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来源
《Thin Solid Films》 |2008年第12期|3965-3970|共6页
作者
R. Baghdad; D. Benlakehal; X. Portier; K. Zellama; S. Charvet; J.D. Sib; M. Clin; L. Chahed;
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作者单位

Laboratoire de Physique de la Matiere Condensee, Faculte des Sciences, Universite de Picardie Jules Verne, 33 Rue Saint-Leu, 80039 Amiens, France Laboratoire de Genie Physique, Universite Ibn Khaldoun, 14000 Tiaret, Algeria;

Laboratoire de Physique des Couches Minces et de Microelectronique, Departement de Physique, Universite d'Oran Es-senia, 31000 Oran, Algeria;

SIFCOM-ENSICAEN, UMR 6176-CNRS, 6 Blvd. Marechal Juin, 14050 Caen, France;

Laboratoire de Physique de la Matiere Condensee, Faculte des Sciences, Universite de Picardie Jules Verne, 33 Rue Saint-Leu, 80039 Amiens, France;

Laboratoire de Physique de la Matiere Condensee, Faculte des Sciences, Universite de Picardie Jules Verne, 33 Rue Saint-Leu, 80039 Amiens, France;

Laboratoire de Physique des Couches Minces et de Microelectronique, Departement de Physique, Universite d'Oran Es-senia, 31000 Oran, Algeria;

Laboratoire de Physique de la Matiere Condensee, Faculte des Sciences, Universite de Picardie Jules Verne, 33 Rue Saint-Leu, 80039 Amiens, France;

Laboratoire de Physique des Couches Minces et de Microelectronique, Departement de Physique, Universite d'Oran Es-senia, 31000 Oran, Algeria;

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nanocrystalline silicon; infrared spectroscopy; Raman spectroscopy; transmission electron microscopy; electrical properties and measurements;

机译：纳米晶硅红外光谱拉曼光谱透射电子显微镜电性能和测量;

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Deposition of nanocryctalline silicon thin films: Effect of total pressure and substrate temperature

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