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首页> 外文期刊>Thin Solid Films >Effect Of Annealing On The Properties Of (100) Zno Films Prepared By Chemical Vapor Deposition Utilizing Zinc Acetate Dihydrate
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Effect Of Annealing On The Properties Of (100) Zno Films Prepared By Chemical Vapor Deposition Utilizing Zinc Acetate Dihydrate

机译：退火对醋酸锌二水合物化学气相沉积制备（100）Zno薄膜性能的影响

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(100) ZnO films were prepared by chemical vapor deposition utilizing zinc acetate dihydrate as the evaporation source. X-ray diffraction analysis of the as-deposited ZnO film shows a strong ZnO (100) diffraction peak centered at 31.85° with a full width at half-maximum (FWHM) of 0.50°. Post-growth annealing at 750 and 1000 ℃ reduces the FWHM of the (100) diffraction peak to 0.26° and 0.16°, respectively. Photoluminescence of the as-deposited films shows a strong near-band-edge (NBE) emission centered at 3.14 eV which is due to defect states at the grain boundary. Post-growth annealing causes increase of defect emission and blue-shift of NBE emission. The blue-shift of NBE emission after annealing is due to re-crystallization that reduces grain boundary defects. The shift of defect emission from 1.80 to 2.25 eV indicates that the dominate defect changes from excess oxygen or zinc interstitial to defects on the surface, which is due to decomposition of ZnO.
机译：（100）使用二水合乙酸锌作为蒸发源通过化学气相沉积制备ZnO膜。沉积后的ZnO膜的X射线衍射分析显示，强ZnO（100）衍射峰位于31.85°，半峰全宽（FWHM）为0.50°。在750和1000℃下的生长后退火将（100）衍射峰的FWHM分别降低到0.26°和0.16°。沉积薄膜的光致发光显示出以3.14 eV为中心的强近带边缘（NBE）发射，这是由于晶界处的缺陷状态所致。生长后退火导致缺陷发射的增加和NBE发射的蓝移。退火后NBE发射的蓝移归因于重结晶，从而减少了晶界缺陷。缺陷发射从1.80 eV转变为2.25 eV，这表明主要缺陷从过量的氧或锌填隙变为表面上的缺陷，这是由于ZnO分解所致。

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