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首页> 外文期刊>Thin Solid Films >Raman and photoreflectance study of CuIn_(1-x)Ga_xSe_2 epitaxial layers
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Raman and photoreflectance study of CuIn_(1-x)Ga_xSe_2 epitaxial layers

机译：CuIn_（1-x）Ga_xSe_2外延层的拉曼和光反射研究

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摘要

The structural and optical properties of CuIn_(1-x)Ga_xSe_2 epitaxial layers were studied in dependence of composition by Photoreflectance (PR) spectroscopy at room and low temperatures and by Raman spectroscopy at room temperature. For compositions with [Ga]/([In] + [Ga]) varying between 0.08 and 0.82, the band gap, determined by fitting the PR-spectra with a third derivative functional form, shows a quadratic dependence on composition. The Raman spectra, recorded under excitation with a vertically polarized Kr~+-laser beam operated at the 647.1 nm line in the region 50-700 cm~(-1), consist mainly of peaks assigned to the A_1- and B_2-phonon modes. The A_1-mode dominates the spectra and shifts linearly, with the increase of the [Ga]/([In] + [Ga]) content, from 172 cm~(-1) (A_1-mode frequency of CuInSe_2) to 181 cm~(-1) (A_1-mode frequency of CuGaSe_2). Combining the Raman and PR-data, an analytical expression has been derived which correlates the band gap energy with the A_1 Raman mode frequency for a given composition of the quaternary compound.
机译：通过在室温和低温下的光反射（PR）光谱和在室温下的拉曼光谱，研究了CuIn_（1-x）Ga_xSe_2外延层的结构和光学性质。对于具有在0.08和0.82之间变化的[Ga] /（[In] + [Ga]）的组成，通过将PR谱与三阶导数功能形式拟合而确定的带隙显示出对组成的二次依赖性。拉曼光谱是在垂直极化的Kr〜+激光束激发下在507.1厘米〜（-1）的647.1 nm线激发下记录的，主要由分配给A_1-和B_2-声子模式的峰组成。 。随着[Ga] /（[In] + [Ga]）含量的增加，A_1模式主导光谱并线性移动，从172 cm〜（-1）（CuInSe_2的A_1模式频率）到181 cm 〜（-1）（CuGaSe_2的A_1模式频率）。结合拉曼和PR数据，得出了一个解析表达式，该表达式将带隙能量与给定四元化合物组成的A_1拉曼模频率相关。

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