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首页> 外文期刊>Thin Solid Films >Front buried metallic contacts and thin porous silicon combination for efficient polycrystalline silicon solar cells
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Front buried metallic contacts and thin porous silicon combination for efficient polycrystalline silicon solar cells

机译：前埋式金属触点和薄的多孔硅组合，可实现高效的多晶硅太阳能电池

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摘要

We investigate the impacts of achieving buried grid metallic contacts (BGMC), with and without application of a front porous silicon (PS) layer, on the photovoltaic properties of polycrystalline silicon (pc-Si) solar cells. A grooving method based on Chemical Vapor Etching (CVE) was used to perform buried grid contacts on the emitter of pc-Si solar cells. After realizing the n~+/p junction using a phosphorus diffusion source, BGMCs were realized using the screen printing technique. We found that the buried metallic contacts improve the short circuit current from 16 mA/cm~2 (for reference cell without buried contacts) to about 19 mA/cm~2. After application of a front PS layer on the n~+ emitter, we observe an enhancement of the short circuit current from 19 to 24 mA/cm~2 with a decrease of the reflectivity by about 40% of its initial value. The dark Ⅰ-Ⅴ characteristics of the pc-Si cells with PS-based emitter show an important reduction of the reverse current together with an improvement of the rectifying behaviour. Spectral response measurements performed at a wavelength range of 400-1100 nm showed a significant increase in the quantum efficiency, particularly at shorter wavelength (400-650 nm). These results indicate that the BGMCs improve the carrier collection and that the PS layer acts as an antireflective coating that reduces reflection losses and passivates the front surface. This low cost and simple technology based on the CVE technique could enable preparing efficient polycrystalline silicon solar cells.
机译：我们研究了在不使用正面多孔硅（PS）层的情况下实现掩埋栅金属接触（BGMC）对多晶硅（pc-Si）太阳能电池光伏性能的影响。使用基于化学气相蚀刻（CVE）的开槽方法在pc-Si太阳能电池的发射极上执行掩埋栅接触。在使用磷扩散源实现n〜+ / p结之后，使用丝网印刷技术实现了BGMC。我们发现，埋入式金属触点将短路电流从16 mA / cm〜2（对于没有埋入式触点的参考电池）提高到约19 mA / cm〜2。在n〜+发射极上施加前PS层后，我们观察到短路电流从19mA / cm〜2提高到24mA / cm〜2，同时反射率降低了其初始值的40％。具有PS基发射极的pc-Si电池的暗Ⅰ-Ⅴ特性显示出反向电流的显着降低以及整流性能的改善。在400-1100 nm的波长范围内执行的光谱响应测量显示出量子效率的显着提高，尤其是在较短的波长（400-650 nm）下。这些结果表明，BGMC改善了载流子的收集，并且PS层充当了减反射涂层，可减少反射损耗并钝化前表面。基于CVE技术的这种低成本，简单的技术可以使制备高效的多晶硅太阳能电池成为可能。

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