...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Thin Solid Films >Contact resistivity measurements of the buried Si-ZnO:Al interface of polycrystalline silicon thin-film solar cells on ZnO:Al
【24h】

Contact resistivity measurements of the buried Si-ZnO:Al interface of polycrystalline silicon thin-film solar cells on ZnO:Al

机译：多晶硅薄膜太阳能电池在ZnO：Al上的掩埋Si-ZnO：Al界面的接触电阻率测量

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

An experimental method is developed for contact resistivity measurements of a buried interface in polycrystalline silicon (poly-Si) thin-film solar cell devices on aluminum doped zinc oxide (ZnO:Al) layers. The solar cell concept comprises a glass substrate covered with a temperature-stable ZnO:Al film as transparent front contact layer, a poly-Si n~+/p~-/p~+ cell, as well as a metal back contact. Glass/ZnO:Al/poly-Si/ metal test stripe structures are fabricated by photolithographic techniques with the ZnO:Al stripes locally bared by laser ablation. The high-temperature treatments during poly-Si fabrication, e.g. a several hours lasting high-temperature step at 600 ℃, are found to have no detrimental impact on the ZnO:Al/Si interface contact resistivity. All measured p_c values range well below 0.4 Ω cm~2 corresponding to a relative power loss AP below 3% for a solar cell with 500 mV open circuit voltage and 30 mA/cm~2 short circuit current density. By inclusion of a silicon nitride (SiN_x) diffusion barrier between ZnO:Al and poly-Si the electrical material quality of the poly-Si absorber can be significantly enhanced. Even in this case, the contact resistivity remains below 0.4 Ω cm~2 if the diffusion barrier has a thickness smaller than 10 nm.
机译：开发了一种实验方法，用于测量掺杂铝的氧化锌（ZnO：Al）层上的多晶硅（poly-Si）薄膜太阳能电池器件中掩埋界面的接触电阻率。太阳能电池概念包括一个玻璃基板，该基板上覆盖有作为透明正面接触层的温度稳定的ZnO：Al膜，一个多晶硅n ++ / p-/ p ++电池以及一个金属背面接触。玻璃/ ZnO：Al /多晶硅/金属测试条结构是通过光刻技术制造的，ZnO：Al条带被激光烧蚀局部裸露。多晶硅制造过程中的高温处理，例如发现在600℃下持续几个小时的高温步骤对ZnO：Al / Si界面接触电阻率没有不利影响。所有测得的p_c值均在0.4Ωcm〜2以下的范围内，对应于具有500 mV开路电压和30 mA / cm〜2短路电流密度的太阳能电池的相对功率损耗AP低于3％。通过在ZnO：Al和多晶硅之间包含氮化硅（SiN_x）扩散阻挡层，可以显着提高多晶硅吸收体的电材料质量。即使在这种情况下，如果扩散阻挡层的厚度小于10 nm，则接触电阻率仍保持在0.4Ωcm〜2以下。

著录项

  • 来源
    《Thin Solid Films》 |2011年第4期|p.1268-1273|共6页
  • 作者

    C. Becker; H. Haeberlein; G. Schoepe; J. Huepkes; B. Rech;

  • 作者单位

    Helmholtz-Zentrum Berlin fuer Materialien und Energie, Institut Silizium-Photovoltaik, Kekulestr. 5, 12489 Berlin, Germany;

    Helmholtz-Zentrum Berlin fuer Materialien und Energie, Institut Silizium-Photovoltaik, Kekulestr. 5, 12489 Berlin, Germany;

    Forschungszentrum Juelich, Institute of Energy Research-Photovoltaics (1EF-5), 52425 Juelich, Germany;

    Forschungszentrum Juelich, Institute of Energy Research-Photovoltaics (1EF-5), 52425 Juelich, Germany;

    Helmholtz-Zentrum Berlin fuer Materialien und Energie, Institut Silizium-Photovoltaik, Kekulestr. 5, 12489 Berlin, Germany;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    contact resistance; thin film solar cells; polycrystalline silicon; zinc oxide; aluminum; transmission line method;

    机译：接触电阻薄膜太阳能电池;多晶硅氧化锌铝;传输线法;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号