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首页> 外文期刊>Thin Solid Films >Highly conducting indium tin oxide films grown by ultraviolet-assisted pulsed laser deposition at low temperatures
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Highly conducting indium tin oxide films grown by ultraviolet-assisted pulsed laser deposition at low temperatures

机译：在低温下通过紫外线辅助脉冲激光沉积法生长的高导电性铟锡氧化物薄膜

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摘要

Indium tin oxide films grown by conventional and ultraviolet-assisted pulsed laser deposition technique (PLD and UVPLD) on Si and Corning glass were analyzed by grazing and symmetric incidence X-ray diffraction. Films deposited at substrate temperatures up to 70 ℃ were amorphous, while films deposited at temperatures of 120 ℃ and higher showed good crystallinity, with a (2 2 2) texture. The diffraction peaks were split indicating that the films contained a two-layer structure. X-ray reflectivity studies showed that the film surface roughness was below 0.5 nm and their density approximately 7.20 g/cm3. Spectroscopic ellipsometry measurements indicated that the films were highly transparent, while X-ray photoelectron spectroscopy investigations showed homogeneous bulk chemical composition and a very small Sn enrichment in the surface region. The carrier mobility was rather high for films deposited at 40 and 70 ℃ and then decreased with the increase of the substrate temperature, because the onset of crystallization at such low temperatures produces a defective structure.
机译：通过掠射和对称入射X射线衍射分析了通过常规和紫外线辅助脉冲激光沉积技术（PLD和UVPLD）在Si和Corning玻璃上生长的氧化铟锡薄膜。在高达70℃的基材温度下沉积的膜是非晶态的，而在120℃及更高温度下沉积的膜则显示出良好的结晶度，并具有（2 2 2）织构。衍射峰分裂，表明该膜包含两层结构。 X射线反射率研究表明，膜表面粗糙度低于0.5nm，其密度约为7.20g / cm 3。椭圆偏振光谱测量表明该膜是高度透明的，而X射线光电子光谱研究表明其均匀的本体化学组成和在表面区域中非常小的锡富集。在40和70℃沉积的薄膜的载流子迁移率很高，然后随着衬底温度的升高而下降，因为在这种低温下开始结晶会产生缺陷结构。

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