Laser annealing of hydrogenated amorphous silicon-carbon films

U. Coscia; G. Ambrosone; C. Minarini; V. Parisi; S. Schutzmann; A. Tebano; S. Restello; V. Rigato

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Laser annealing of hydrogenated amorphous silicon-carbon films

机译：氢化非晶硅碳膜的激光退火

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Hydrogenated amorphous silicon-carbon films with carbon content, x = C/(C + Si), ranging from 0.08 to 0.28 have been irradiated by excimer (KrF) laser varying the incident energy density, Φ, from 64 to 242 ml/cm~2. The crystallization of the silicon phase is induced in all the samples, independently of the alloy composition and the average Si crystallite size increases with the laser energy density. Cubic SiC crystallites, sized 200-450 A, are only detectable in samples with x ≥ 0.18 irradiated at Φ≥ 188 mJ/cm~2. The structural and electrical properties of the laser treated films have been investigated. After crystallization all films show a noticeable increase in dark conductivity.

机译：准分子（KrF）激光辐照了碳含量为x = C /（C + Si）在0.08至0.28之间的氢化非晶硅碳膜，其入射能量密度Φ从64至242 ml / cm〜 2。在所有样品中均会诱发硅相的结晶，而与合金成分无关，并且平均硅微晶尺寸随激光能量密度的增加而增加。仅在Φ≥188 mJ / cm〜2的x≥0.18的样品中才能检测到大小为200-450 A的立方SiC微晶。已经研究了激光处理的膜的结构和电性能。结晶后，所有膜均显示出暗电导率的显着增加。

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来源
《Thin Solid Films》 |2004年第4期|p.7-12|共6页
作者
U. Coscia; G. Ambrosone; C. Minarini; V. Parisi; S. Schutzmann; A. Tebano; S. Restello; V. Rigato;
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作者单位

Dipartimento di Scienze Fisiche, Universita di Napoli 'Federico II', Complesso Universitario di Monte S. Angela, via Cintia, I-80126 Napoli, Italy;

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原文格式 PDF
正文语种 eng
中图分类工程材料学;
关键词
silicon-carbon alloys; laser treatment; crystallization;

机译：硅碳合金;激光处理;结晶;

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1. Crystallization of hydrogenated amorphous silicon-carbon films by means of laser treatments [J] . G. Ambrosone, U. Coscia, S. Lettieri, Applied Surface Science . 2005,第1a4期

机译：氢化非晶硅碳膜的激光处理结晶
2. Effect of Annealing on the Optical and Chemical Bonding Properties of Hydrogenated Amorphous Carbon and Hydrogenated Amorphous Carbon Nitride Thin Films [J] . Richard Ritikos, Chow Chee Siong, Siti Meriam Ab. Gani, Japanese journal of applied physics . 2009,第10期

机译：退火对氢化非晶碳和氢化非晶氮化碳薄膜光学和化学键合性能的影响
3. Crystallization Of Hydrogenated Amorphous Silicon Carbon Films With Laser And Thermal Annealing [J] . D.K. Basa, G. Ambrosone, U. Coscia, Applied Surface Science . 2009,第10期

机译：氢化非晶硅碳薄膜的激光退火和热退火
4. High-frequency electron paramagnetic resonance study of the as deposited and annealed carbon-rich hydrogenated amorphous silicon-carbon films [C] . A. V. Vasin, E. N. Kalabukhova, S. N. Lukin, MRS spring meeting symposium . 2008

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5. Proton NMR studies of PECVD hydrogenated amorphous silicon films and HWCVD hydrogenated amorphous silicon films. [D] . Herberg, Julie Lynn. 2002

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6. Enhanced Photoluminescence of Hydrogenated Amorphous Silicon Carbide Thin Films by Means of a Fast Thermal Annealing Process [O] . Israel Vivaldo, Roberto C. Ambrosio, Roberto López, 2020

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7. A study of reactively evaporated amorphous hydrogenated silicon amorphous hydrogenated germanium and recrystallization of amorphous germanium by rapid thermal annealing method. [O] . 1993

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8. Preparation and Characterization of Hydrogenated Amorphous-Silicon Films Produced by Ion Plating and Hydrogenated Amorphous-Boron Films Produced by Glow-Discharge Decomposition. Final Report, April 1, 1980-May 31, 1981 [R] . Cocks F.H, Jones, P. L. 1981

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Laser annealing of hydrogenated amorphous silicon-carbon films

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