Optimization of Ge concentration and substrate temperature to maximize the photocurrent of Ge-TiO_2 nanocomposite thin films prepared on p-Si substrates

Abe Seishi

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Optimization of Ge concentration and substrate temperature to maximize the photocurrent of Ge-TiO_2 nanocomposite thin films prepared on p-Si substrates

机译：Ge浓度和衬底温度的优化，最大化在P-Si基材上制备的Ge-TiO_2纳米复合薄膜的光电流

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We investigate optimization of the Ge concentration and substrate temperature to maximize the photocurrent of a nanocomposite thin film containing Ge nanocrystals (NCs) embedded in a TiO2 matrix prepared on a p-type Si substrate. The films were deposited on the substrate using radio-frequency sputtering with a target of a ceramic TiO2 disc with Ge chips at substrate temperatures ranging from 573 K to 873 K. Both Ge and TiO2 in the composite crystallized at substrate temperatures exceeding 823 K. Scanning transmission electron microscopy revealed that the typical size of the Ge NCs was 7 nm. The maximum photocurrent was obtained at a Ge concentration and substrate temperature of approximately 11 at.% and 800 K, respectively.

机译：我们研究了Ge浓度和衬底温度的优化，以最大化含有嵌入于在P型Si衬底上的TiO 2基质中的Ge纳米晶体（NCS）的纳米复合薄膜的光电流。使用射频溅射在基板上沉积薄膜，该射频溅射用陶瓷TiO2盘的靶，在底物温度下，从573k至873k的基础温度范围内的Ge和TiO 2在基板温度下结晶超过823k。扫描透射电子显微镜显示GE NCS的典型尺寸为7nm。在Ge浓度和底物温度下获得最大光电流，分别为约11.％和800 k。

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来源
《Thin Solid Films》 |2021年第1期|138647.1-138647.5|共5页
作者
Abe Seishi;
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作者单位

Res Inst Electromagnet Mat Narita 9-5-1 Tomiya Miyagi 9813341 Japan;

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正文语种 eng
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Titanium dioxide; Germanium; Nanocrystals; Composite; Crystallization temperature; Photocurrent spectroscopy; Substrate temperature;

机译：二氧化钛;锗;纳米晶体;复合材料;结晶温度;光电流光谱;衬底温度;

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Optimization of Ge concentration and substrate temperature to maximize the photocurrent of Ge-TiO_2 nanocomposite thin films prepared on p-Si substrates

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