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首页> 外文期刊>Thin Solid Films >GaAs-based optoelectronics grown on GaAs/Si virtual substrates with multiple spaced thermal-cycle annealing
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GaAs-based optoelectronics grown on GaAs/Si virtual substrates with multiple spaced thermal-cycle annealing

机译：基于GaAs / Si虚拟基板的GaAs基光电子，具有多个间隔热循环退火

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This paper describes the growth of a GaAs-based light-emitting diode (LED) on a GaAs/Si virtual substrate by metalorganic chemical vapor deposition. A GaAs/Si virtual substrate (or template) was formed by depositing a 3.5-mu m-thick GaAs epilayer on a (100) Si substrate with the employment of multiple spaced thermal-cycle annealing (TCA). The number of annealing cycle was zero to five in this study to examine crystallinity variation of a GaAs/Si template. High-resolution X-ray rocking curve analysis showed that (400) GaAs crystallinity in terms of full width at half maximum (FWHM) improved significantly with the number of the spaced TCA and then reached a minimum at four annealing cycles. There seems to be no significant difference in crystallinity between the GaAs/Si templates with four and five spaced annealing cycles. The GaAs/Si template with four spaced annealing cycles demonstrated not only an excellent (400) FWHM value of 94.6 arcsec but also a reduced dislocation density of 2.4 x 107 cm-2 evaluated from plan-view transmission electron microscopic observation. Electroluminescence spectra of GaAs-based LEDs grown on GaAs/Si templates showed that emission peak intensity increased monotonically with the number of the spaced annealing cycles. Furthermore, the emission peak intensity of a LED grown on the GaAs/Si template with five spaced annealing cycles reached 80% of a reference LED grown on a GaAs substrate, indicating that the presented multiple spaced TCA method may be useful in obtaining superior crystallinity of a GaAs/Si template for the potential application of monolithic integration of optoelectronic devices with Si.
机译：本文通过金属化学气相沉积描述了GaAs / Si虚拟基板上的基于GaAs的发光二极管（LED）的生长。通过在（100）Si衬底上沉积3.5-mu M厚的GaAs倒置器，通过采用多个间隔的热循环退火（TCA）来形成GaAs / Si虚拟基板（或模板）。在该研究中，退火循环的数量为零至五，以检查GaAs / Si模板的结晶度变化。高分辨率X射线摇摆曲线分析表明，在半最大（FWWHM）的全宽度方面（400）GaAs结晶度随着间隔的TCA的数量而显着改善，然后在四个退火循环中达到最小值。在具有四个和五个间隔的退火循环的GaAs / Si模板之间似乎没有显着差异。具有四个间隔退火循环的GaAs / Si模板不仅展示了优异的（400）FWHM值为94.6弧度，而且从平面透射电子显微镜观察评估了2.4×107cm-2的脱位密度降低。在GaAs / Si模板上生长的基于GaAs的LED的电致发光光谱表明，发射峰强度随着间隔的退火循环的数量单调而单调地增加。此外，在GaAs / Si模板上生长的LED的发射峰强度达到在GaAs衬底上生长的参考LED的80％，表明所示的多个间隔的TCA方法可用于获得优异的结晶度具有Si的光电器件单片集成潜在应用的GaAs / Si模板。

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