Microcrystalline silicon-germanium (μc-SiGe) films were fabricated on glass substrates by the RF reactive magnetron sputtering method using Ar and H_2 mixtures. We could reduce the crystallization temperature to 100℃ and obtained the photosensitivity in the μc-SiGe films with any Ge content from 0 to 100%. These results indicate that the H_2 introduction into the sputtering gases has two important effects to decrease the crystallization temperature of the μc-SiGe films and to improve the film properties by the hydrogen termination of defects.%シリコン系薄膜太陽電池は原材料の消費量の抑制，製造時rnの省エネルギーや低コストの面から次世代太陽電池として期rn待されているが，現状ではバルクシリコン結晶太陽電池よりrn変換効率が低い．薄膜太陽電池の変換効率を飛躍的に向上さrnせるためには，材料特性の向上を進めるとともに波長感度のrn異なる複数の薄膜太陽電池を積層させて，より広い波長範囲rnの太陽光を有効利用する積層型太陽電池の開発が望まれる．
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