Influence of an In-Plane Magnetic Field on Pulsed Magnetization Reversal of Single-Crystal (Bi,Lu)_3(Fe,Ga)_5O_(12) Films with (210) Orientation

V. V. Randoshkin; A. M. Saletsky; N. N. Usmanov; D. B. Chopornyak

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Influence of an In-Plane Magnetic Field on Pulsed Magnetization Reversal of Single-Crystal (Bi,Lu)_3(Fe,Ga)_5O_(12) Films with (210) Orientation

机译：平面磁场对（210）取向单晶（Bi，Lu）_3（Fe，Ga）_5O_（12）薄膜的脉冲磁化反转的影响

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Photoresponse was used to study the influence of an in-plane magnetic field on pulsed magnetization reversal and relaxation in single-crystal (Bi,Lu)_3(Fe,Ga)_5O_(12) films with (210) orientation. Dynamic domain structures were observed using high-speed photography.

机译：使用光响应来研究面内磁场对（210）取向单晶（Bi，Lu）_3（Fe，Ga）_5O_（12）薄膜中脉冲磁化反转和弛豫的影响。使用高速摄影观察动态域结构。

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《Physics of the solid state》 |2004年第3期|共5页
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V. V. Randoshkin; A. M. Saletsky; N. N. Usmanov; D. B. Chopornyak;
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中图分类固体物理学;
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1. Influence of an In-Plane Magnetic Field on Pulsed Magnetization Reversal of Single-Crystal (Bi,Lu)_3(Fe,Ga)_5O_(12) Films with (210) Orientation [J] . V. V. Randoshkin, A. M. Saletsky, N. N. Usmanov, Physics of the solid state . 2004,第3期

机译：平面磁场对（210）取向单晶（Bi，Lu）_3（Fe，Ga）_5O_（12）薄膜的脉冲磁化反转的影响
2. On the Velocity of an End Domain Wall in (Bi,Lu)_3(Fe,Ga)_5O_(12) Single-Crystal Films with (210) Orientation [J] . V. V. Randoshkin, A. M. Saletskii, N. N. Usmanov, Physics of the solid state . 2002,第5期

机译：（Bi，Lu）_3（Fe，Ga）_5O_（12）取向为（210）的单晶膜的端畴壁速度
3. Domain Dynamics in (210)-Oriented Single-Crystal (Bi,Y,Lu,Pr)_3(Fe,Ga)_5O_(12) Films [J] . V. V. Randoshkin, V. A. Polezhaev, Yu. N. Sazhin, Physics of the solid state . 2003,第7期

机译：（210）取向单晶（Bi，Y，Lu，Pr）_3（Fe，Ga）_5O_（12）薄膜的畴动力学
4. MAGNETIC LAYERS IN EPITAXIAL IRON GARNET (Bi,Lu)_3(Fe,Ga)_5O_(12) FILMS WITH (111) ORIENTATION [C] . Randoshkin V. V., Vasileva N. V., Kozlov V. I., International Conference on Single Crystal Growth and Heat amp; Mass Transfer(ICSC-2003) vol.2; 20030922-26; Obninsk(RU) . 2003

机译：环氧铁石榴石（Bi，Lu）_3（Fe，Ga）_5O_（12）具有（111）取向的薄膜中的磁性层
5. Development of magnetic field sensors using Bismuth-substituted garnets thin films with in-plane magnetization. [D] . Nistor, Iulian. 2006

机译：使用具有平面内磁化强度的铋取代石榴石薄膜开发磁场传感器。
6. Ultrafast magnetization modulation induced by the electric field component of a terahertz pulse in a ferromagnetic-semiconductor thin film [O] . Tomoaki Ishii, Hiromichi Yamakawa, Toshiki Kanaki, -1

机译：铁磁半导体薄膜中太赫兹脉冲的电场分量引起的超快磁化调制
7. Magnetization dynamics in NiFe thin films induced by short in-plane magnetic field pulses [O] . Gerrits T., Hohlfeld J., Gielkens O., 2001

机译：短面内磁场脉冲在NiFe薄膜中引起的磁化动力学

Influence of an In-Plane Magnetic Field on Pulsed Magnetization Reversal of Single-Crystal (Bi,Lu)_3(Fe,Ga)_5O_(12) Films with (210) Orientation

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